Daw, M. S. and Smith, D. L. and McGill, T. C. (1981) Surface core excitons in III-V semiconductors. Journal of Vacuum Science and Technology, 19 (3). pp. 388-389. ISSN 0022-5355 http://resolver.caltech.edu/CaltechAUTHORS:20120718-104550766
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Abstract
Recent experiments have shown that the cation core excitons on the (110) surface of many III-V semiconductors have very large binding energies.(^1) They are sometimes reported to be bound by as much as ≳0.8 eV, tightly bound compared to bulk binding energies of ≾0.1 eV. To explore this phenomenon, we have calculated the binding energies and oscillator strengths of core excitons on the (110) surface of GaAs, GaSb, GaP, and InP.
| Item Type: | Article |
|---|---|
| Additional Information: | © 1981 American Vacuum Society. Received 18 March 1981; accepted 18 June 1981. |
| Subject Keywords: | semiconductor materials; surfaces; excitions; anions; cations; binding energy |
| Classification Code: | PACS: 71.35.-y; 73.20.-r; 72.80.Ey |
| Record Number: | CaltechAUTHORS:20120718-104550766 |
| Persistent URL: | http://resolver.caltech.edu/CaltechAUTHORS:20120718-104550766 |
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| Official Citation: | Summary Abstract: Surface core excitons in III--V semiconductors M. S. Daw, D. L. Smith, and T. C. McGill, J. Vac. Sci. Technol. 19, 388 (1981), DOI:10.1116/1.571069 |
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. |
| ID Code: | 32549 |
| Collection: | CaltechAUTHORS |
| Deposited By: | Aucoeur Ngo |
| Deposited On: | 18 Jul 2012 18:07 |
| Last Modified: | 26 Dec 2012 15:36 |
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