Daw, M. S. and Smith, D. L. and McGill, T. C. (1981) Surface core excitons in III-V semiconductors. Journal of Vacuum Science and Technology, 19 (3). pp. 388-389. ISSN 0022-5355. http://resolver.caltech.edu/CaltechAUTHORS:20120718-104550766
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Recent experiments have shown that the cation core excitons on the (110) surface of many III-V semiconductors have very large binding energies.(^1) They are sometimes reported to be bound by as much as ≳0.8 eV, tightly bound compared to bulk binding energies of ≾0.1 eV. To explore this phenomenon, we have calculated the binding energies and oscillator strengths of core excitons on the (110) surface of GaAs, GaSb, GaP, and InP.
|Additional Information:||© 1981 American Vacuum Society. Received 18 March 1981; accepted 18 June 1981.|
|Subject Keywords:||semiconductor materials; surfaces; excitions; anions; cations; binding energy|
|Classification Code:||PACS: 71.35.-y; 73.20.-r; 72.80.Ey|
|Official Citation:||Summary Abstract: Surface core excitons in III--V semiconductors M. S. Daw, D. L. Smith, and T. C. McGill, J. Vac. Sci. Technol. 19, 388 (1981), DOI:10.1116/1.571069|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Aucoeur Ngo|
|Deposited On:||18 Jul 2012 18:07|
|Last Modified:||26 Dec 2012 15:36|
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