CaltechAUTHORS
  A Caltech Library Service

Energy levels of semiconductor surface vacancies

Daw, M. S. and Smith, D. L. (1980) Energy levels of semiconductor surface vacancies. Journal of Vacuum Science and Technology, 17 (5). pp. 1028-1031. ISSN 0022-5355. http://resolver.caltech.edu/CaltechAUTHORS:20120718-141135113

[img]
Preview
PDF - Published Version
See Usage Policy.

460Kb

Use this Persistent URL to link to this item: http://resolver.caltech.edu/CaltechAUTHORS:20120718-141135113

Abstract

We present calculations of the bound state energy levels of anion vacancies near the surface of a III–V semiconductor. We consider the (110) surface of GaAs, InP, and the Ga_(1−x)Al_(x)As alloy system. As the vacancy is moved toward the surface, the energy levels are only slightly perturbed until the vacancy reaches the second atomic layer from the surface. At this point, the anion vacancy levels move to lower energy. We find that there is a general trend in the vacancy energy levels with semiconductor ionicity. As the material becomes more ionic, the anion vacancy levels move to higher energy. Comparing this trend with experimentally observed Schottky barrier heights, we find a strong correlation between the position of the highest occupied level in the anion vacancy and the measured Fermi level at the surface. This result suggests that the recently proposed defect model is capable of accounting for observed trends in Schottky barrier formation.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1116/1.570584DOIUNSPECIFIED
http://link.aip.org/link/doi/10.1116/1.570584PublisherUNSPECIFIED
Additional Information:© 1980 American Vacuum Society. Received 7 March 1980; accepted 15 April 1980. We thank T. C. McGill, W. E. Spicer, R H. Wieder, and R. H. Williams for valuable discussions on subjects related to this work and for sending us preprints of their papers prior to publication. We acknowledge the support of the Office of Naval Research under Contract No. N00014-79-C-0797. D. L. Smith acknowledges support from the Alfred P. Sloan Foundation.
Funders:
Funding AgencyGrant Number
Office of Naval Research (ONR)N00014-79-C-0797
Alfred P. Sloan FoundationUNSPECIFIED
Subject Keywords:surfaces; electronic structure; energy levels; vacancies; schottky barrier diodes; fermi level; LCAO method
Classification Code:PACS: 73.20.Hb; 73.30.+y; 71.55.-i
Record Number:CaltechAUTHORS:20120718-141135113
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:20120718-141135113
Official Citation:Energy levels of semiconductor surface vacancies M. S. Daw and D. L. Smith, J. Vac. Sci. Technol. 17, 1028 (1980), DOI:10.1116/1.570584
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:32560
Collection:CaltechAUTHORS
Deposited By: Jason Perez
Deposited On:18 Jul 2012 22:14
Last Modified:26 Dec 2012 15:36

Repository Staff Only: item control page