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Compositional dependence of Schottky barrier heights for Au on chemically etched In_(x)Ga_(1-x)P surfaces

Kuech, T. F. and McGaldin, J. O. (1980) Compositional dependence of Schottky barrier heights for Au on chemically etched In_(x)Ga_(1-x)P surfaces. Journal of Vacuum Science and Technology, 17 (5). pp. 891-893. ISSN 0022-5355. http://resolver.caltech.edu/CaltechAUTHORS:20120718-141159392

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Abstract

Measurements of the Au Schottky barrier height were carried out on thin films of n‐In_(x)Ga_(1−x)P, of various compositions epitaxially grown on n‐GaAs substrates. Conventional C–V, I–V, and photo response techniques were used. The junction was formed by evaporating Au in an ion‐pumped vacuum system onto a In_(x)Ga_(1−x)P surface which had been chemically etched (5H_(2)SO_(4):1H_(2)O_(2):1H_(2)O at 40 °C for 90 s). Barrier heights determined from the I–V and photoresponse were found to be in good agreement while the C–V measurement encountered difficulties. The Au barrier, ϕ_p, to p‐In_(x)Ga_(1−x)P was found to be independent of composition. The barrier, ϕ_p, was determined by the relation ϕ_(p) + ϕ_(n)=ϕ_(g) where ϕ_(g) is the bandgap energy and ϕn is the measured barrier to n‐In_(x)Ga_(1−x)P. It has been observed that the Au barrier height to p‐type material for most compound semiconductors is determined by the anion, thus p‐InP and p‐GaP have the same Au barrier, about 0.76 eV. This dependence on the anion of the compound has now been seen to extend to the alloy system In_(x)Ga_(1−x)P measured here. While chemically etched specimens yielded diodes with reproducible barrier heights, diodes formed on surfaces which were untreated or cleaned only with organic solvents were of poor quality with varying barrier heights or even ohmic contacts.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1116/1.570611DOIUNSPECIFIED
http://link.aip.org/link/doi/10.1116/1.570611UNSPECIFIEDUNSPECIFIED
Additional Information:The authors would like to thank M. Lorentz, N. Holonyak, and T. Zamcrowski for supplying materials, and J. Rest for his many helpful discussions. This work was supported in part by the Office of Naval Research (L. Cooper),
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Funding AgencyGrant Number
Office of Naval ResearchUNSPECIFIED
Subject Keywords:indium phosphides; gallium phosphides; films; gold; gallijm arsenides; substrates; epitaxy; semiconductor junctions; cv characteristic; iv characteristic; vapor deposited coatings; etching; energy gap; high vacuum
Classification Code:PACS: 73.30.+y
Record Number:CaltechAUTHORS:20120718-141159392
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:20120718-141159392
Official Citation:Compositional dependence of Schottky barrier heights for Au on chemically etched In[sub x]Ga[sub 1 - x]P surfaces T. F. Kuech and J. O. McCaldin, J. Vac. Sci. Technol. 17, 891 (1980), DOI:10.1116/1.570611
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:32561
Collection:CaltechAUTHORS
Deposited By: Jason Perez
Deposited On:18 Jul 2012 23:41
Last Modified:26 Dec 2012 15:36

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