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Localization of superlattice electronic states and complex bulk band structures

Schulman, J. N. and McGill, T. C. (1980) Localization of superlattice electronic states and complex bulk band structures. Journal of Vacuum Science and Technology, 17 (5). pp. 1118-1119. ISSN 0022-5355. http://resolver.caltech.edu/CaltechAUTHORS:20120719-094821500

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Abstract

The relative lineup of the band structures of the two constituents of a semiconductor superlattice can cause charge carriers to be confined. This occurs when the energy of a superlattice state is located in an allowed energy region of one of the constituents (the "well" semiconductor), but in the band gap of the other (the "barrier" semiconductor). A charge carrier will tend to be confined in the layers made from the semiconductor with the allowed region at that energy. It will have an exponentially decaying amplitude to be found in the semiconductor with a band gap at that energy.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1116/1.570625DOIUNSPECIFIED
http://link.aip.org/link/doi/10.1116/1.570625PublisherUNSPECIFIED
Additional Information:© 1980 American Vacuum Society. Received 14 May 1980; accepted 20 May 1980. Work supported in part by the ARO under Contract No. DAAG29-77-C-0015.
Funders:
Funding AgencyGrant Number
Army Research Office (ARO)DAAG29-77-C-0015
Classification Code:PACS: 73.40.Lq
Record Number:CaltechAUTHORS:20120719-094821500
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:20120719-094821500
Official Citation:Summary Abstract: Localization of superlattice electronic states and complex bulk band structures J. N. Schulman and T. C. McGill, J. Vac. Sci. Technol. 17, 1118 (1980), DOI:10.1116/1.570625
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:32582
Collection:CaltechAUTHORS
Deposited By: Jason Perez
Deposited On:19 Jul 2012 17:15
Last Modified:26 Dec 2012 15:37

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