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XPS study of the chemical structure of the nickel/silicon interface

Grunthaner, P. J. and Grunthaner, F. J. and Mayer, J. W. (1980) XPS study of the chemical structure of the nickel/silicon interface. Journal of Vacuum Science and Technology, 17 (5). pp. 924-929. ISSN 0022-5355. http://resolver.caltech.edu/CaltechAUTHORS:20120719-132031989

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Abstract

The chemical nature of the Ni/Si, Ni/Ni_(2)Si and Si/Ni_(2)Si interfaces have been investigated using x‐ray photoelectron spectroscopy. Peak position, line shapes, and envelope intensities are used to probe the compositional structure of these systems. Two approaches have been employed: one approach examines the advancing planar silicide front by dynamically monitoring the in situ formation of Ni_(2)Si. This has the advantage of allowing examination of a realistic interface which is bounded on either side by an extended solid. The second approach follows the development of the Si/Ni interface using UHV depositions of thin layers of Ni on Si <100>. ^(4)He^+ backscattering is used to follow the progression of the thin film reaction and to provide quantitative information on atomic composition. These experiments demonstrate that the Ni/Ni_(2)Si interface consists of a Ni‐rich silicide transitional phase while the Si/Ni_(2)Si interface shows a transitional structure which is correspondingly Si‐rich. Intensity analysis indicates that these interfacial regions are at least 22 Å wide for α‐Si substrates and 9–14 Å wide for crystalline Si. The as‐deposited Ni/Si interface cannot be described as a unique single‐phase, but rather as a chemically graded transitional region showing a composition which varies from Si‐rich to Ni‐rich silicides.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1116/1.570618DOIUNSPECIFIED
http://link.aip.org/link/doi/10.1116/1.570618PublisherUNSPECIFIED
Additional Information:© 1980 American Vacuum Society. Received 20 February 1980; accepted 15 May 1980. The authors wish to thank A. Madhukar for stimulating discussions. This paper presents the results of one phase of research performed at The Jet Propulsion Laboratory, California Institute of Technology, sponsored by the National Aeronautics and Space Administration under contract NAS7-100 and the Office of Naval Research (L. R. Cooper).
Funders:
Funding AgencyGrant Number
NASANAS7-100
Office of Naval Research (ONR)UNSPECIFIED
Subject Keywords:Nickel; silicon; interfaces; chemical analysis; photoelectron spectroscopy; x radiation; ultrahigh vacuum; vapor deposited coatings; helium ions; backscattering; nickel oxides; etching
Classification Code:PACS: 73.40.Ns; 79.60.Jv; 82.80.Dx; 82.80.Ej
Record Number:CaltechAUTHORS:20120719-132031989
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:20120719-132031989
Official Citation:XPS study of the chemical structure of the nickel/silicon interface P. J. Grunthaner, F. J. Grunthaner, and J. W. Mayer, J. Vac. Sci. Technol. 17, 924 (1980), DOI:10.1116/1.570618
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:32592
Collection:CaltechAUTHORS
Deposited By: Jason Perez
Deposited On:19 Jul 2012 21:16
Last Modified:26 Dec 2012 15:38

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