Wieluński, L. and Scott, D. M. and Nicolet, M-A. and von Seefeld, H. (1981) Alteration of Ni silicide formation by N implantation. Applied Physics Letters, 38 (2). pp. 106-108. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:20120719-133310810
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The possibility of controlling the growth of nickel silicide by implanting N into thin Ni films evaporated on Si substrates has been studied using (^4)He backscattering spectrometry. The reaction between Ni and Si is completely halted below annealing temperatures of ∼375 °C by implanted doses of 5×10(^16) N/cm^2. At higher annealing temperatures, localized intermixing takes place. For low doses ≲0.5×10(^16) N/cm^2, the reaction between Ni and Si is that observed for unimplanted samples both in the phase formed (Ni(_2)Si) and in rate of growth. For intermediate doses ∼0.9×10(^16) N/cm^2, the first phase formed corresponds to NiSi, and the growth rate is greatly reduced. These results are explained in terms of a silicon nitride barrier to Ni diffusion forming at the Ni/Si interface.
|Additional Information:||© 1981 American Institute of Physics. Received 27 June 1980; accepted for publication 24 October 1980. The authors wish to acknowledge R. Fernandez and D. Tonn for their technical assistance. This research was supported in part by the U. S. Army Research Office under the Joint Services Electronic Program Contract No. (DAAG- 29-80-C-0103).|
|Subject Keywords:||nickel silicides; synthesis; ion implantation; nitrogen ions; control; films; helium 4; backscattering; high temperature; spectroscopy; silicon; annealing; silicon nitrides; diffusion; interfaces|
|Classification Code:||PACS: 68.55.-a; 82.20.Hf; 81.15.-z|
|Official Citation:||Alteration of Ni silicide formation by N implantation L. Wielunski, D. M. Scott, M.-A. Nicolet, and H. von Seefeld, Appl. Phys. Lett. 38, 106 (1981), DOI:10.1063/1.92259|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Aucoeur Ngo|
|Deposited On:||19 Jul 2012 23:15|
|Last Modified:||26 Dec 2012 15:38|
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