Kimble, H. J. (1980) Near-Field Emission of Lead-Sulfide-Selenide Homojunction Lasers. IEEE Journal of Quantum Electronics, 16 (7). pp. 740-743. ISSN 0018-9197 http://resolver.caltech.edu/CaltechAUTHORS:20120720-122103546
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Measurements of the near-field intensity distributions of three lead-sulfide-selenide diode lasers operating near 4.8 μm have been made as a function of injection current. Localized emission in the near field exhibits peaked structure of full width from 5 to 10 μm for operation above threshold. From the dependence of the emission profiles on injection current estimates of 25 cm ^(-1) and 0.09 cm/A are made for the distributed loss and gain coefficients for one of the lasers. Optical confinement perpendicular to the p-n junction can be explained in terms of the homojunction properties.
|Additional Information:||© 1980 IEEE. Manuscript received January 21, 1980. W. Lo of General Motors Research Laboratories provided the lasers used in these experiments and discussions with him have been most helpful. The technical assistance of T. H. Van Steenkiste is gratefully acknowledged.|
|Subject Keywords:||Apertures; Diffraction; Diode lasers; Gallium arsenide; Lenses; Optical losses; P-n junctions; Spectroscopy; Stimulated emission; Zinc compounds|
|Official Citation:||Kimble, H.; , "Near-field emission of lead-sulfide-selenide homojunction lasers," Quantum Electronics, IEEE Journal of , vol.16, no.7, pp. 740- 743, Jul 1980 doi: 10.1109/JQE.1980.1070564 URL: http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=1070564&isnumber=23011|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Aucoeur Ngo|
|Deposited On:||20 Jul 2012 20:07|
|Last Modified:||26 Dec 2012 15:39|
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