Wilt, D. and Bar-Chaim, N. and Margalit, S. and Ury, I. and Yust, M. and Yariv, A. (1980) Low threshold Be implanted (GaAl)As laser on semi-insulating substrate. IEEE Journal of Quantum Electronics, 16 (4). pp. 390-391. ISSN 0018-9197 http://resolver.caltech.edu/CaltechAUTHORS:20120724-080910932
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Be implanted stripe geometry double heterostructure lasers have been fabricated on a semi-insulating GaAs substrate, with threshold currents as low as 15 mA for a cavity length of 100 μm. The laser has been monolithically integrated with a metal-semiconductor field-effect transistor.
|Additional Information:||© 1980 IEEE. Manuscript received December 13, 1979. This work was supported in part by the Office of Naval Research and the National Science Foundation.|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Tony Diaz|
|Deposited On:||25 Jul 2012 20:43|
|Last Modified:||26 Dec 2012 15:42|
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