Boatright, R. L. and McCaldin, J. O. (1976) Rapid growth of Si by solid‐phase epitaxy, including comparisons to conventional Si crystal growth. Journal of Vacuum Science and Technology, 13 (4). pp. 938-939. ISSN 0022-5355 http://resolver.caltech.edu/CaltechAUTHORS:20120725-094120934
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A recent development in solid‐phase epitaxy is discussed, namely, that Si can be rapidly grown back into a dissolved pit in a (111) Si substrate to just exactly fill the pit, at which time growth ceases. This growth process is driven by the nearby dissolution of amorphous Si and, unlike most conventional growth processes, is not a near‐equilibrium process. Also the solid‐state growth is strongly affected by volume changes occurring during growth.
|Additional Information:||© 1976 American Vacuum Society. Received 23 February 1976; in final form 5 April 1976. Supported in part by the Office of Naval Research.|
|Classification Code:||PACS: 68.50.+j, 61.50.Cj, 81.20.-n, 85.30.-z|
|Official Citation:||Rapid growth of Si by solid-phase epitaxy, including comparisons to conventional Si crystal growth R. L. Boatright and J. O. McCaldin, J. Vac. Sci. Technol. 13, 938 (1976), DOI:10.1116/1.569025|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Jason Perez|
|Deposited On:||25 Jul 2012 18:39|
|Last Modified:||26 Dec 2012 15:43|
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