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Giant Planar Hall Effect in Epitaxial (Ga,Mn)As Devices

Tang, H. X. and Kawakami, R. K. and Awschalom, D. D. and Roukes, M. L. (2003) Giant Planar Hall Effect in Epitaxial (Ga,Mn)As Devices. Physical Review Letters, 90 (10). Art. No. 107201. ISSN 0031-9007. http://resolver.caltech.edu/CaltechAUTHORS:TANprl03

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Abstract

Large Hall resistance jumps are observed in microdevices patterned from epitaxial (Ga,Mn)As layers when subjected to a swept, in-plane magnetic field. This giant planar Hall effect is 4 orders of magnitude greater than previously observed in metallic ferromagnets. This enables extremely sensitive measurements of the angle-dependent magnetic properties of (Ga,Mn)As. The magnetic anisotropy fields deduced from these measurements are compared with theoretical predictions.


Item Type:Article
Additional Information:©2003 The American Physical Society (Received 5 April 2002; published 12 March 2003) We gratefully acknowledge support from DARPA under Grants No. DSO/SPINS-MDA 972-01-1-0024 (Caltech) and No. DARPA/ONR N00014-99-1-1096 (UCSB), and from the AFOSR under Grant No. F49620-02-10036 (UCSB). We also thank Professor P. E.Wigen for valuable discussions.
Subject Keywords:epitaxial layers; gallium arsenide; manganese compounds; magnetic semiconductors; Hall effect; ferromagnetic materials; magnetic anisotropy; giant magnetoresistance
Record Number:CaltechAUTHORS:TANprl03
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:TANprl03
Alternative URL:http://dx.doi.org/10.1103/PhysRevLett.90.107201
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:3271
Collection:CaltechAUTHORS
Deposited By: Archive Administrator
Deposited On:25 May 2006
Last Modified:26 Dec 2012 08:53

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