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Diagnostic test for ion implantation dosimetry

Matteson, S. and Tonn, D. G. and Nicolet, M-A. (1979) Diagnostic test for ion implantation dosimetry. Journal of Vacuum Science and Technology, 16 (3). pp. 882-883. ISSN 0022-5355 http://resolver.caltech.edu/CaltechAUTHORS:20120726-110219420

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Abstract

A diagnostic technique is discussed and illustrated by experiment, which reveals sources of error in current integration dosimetry. The technique uses simple, specially prepared samples and an oscilloscope display of the measured current versus time.


Item Type:Article
Additional Information:© 1979 American Vacuum Society. Received 8 February 1979; accepted 27 March 1979. The authors gratefully acknowledge the support of R. Gorris and J. Mallory for the preparation of the diagnostic samples. This research was supported in part by the U.S. Army Research Office under the Joint Services Electronic Program (DAAG-29-77-C-0015)
Funders:
Funding AgencyGrant Number
Army Research Office (ARO) Joint Services Electronic ProgramDAAG-29-77-C-0015
Subject Keywords:SEMICONDUCTOR DEVICES, ION IMPLANTATION, CRYSTAL DOPING, DOSIMETRY, DIAGNOSTIC TECHNIQUES, SILICON, CRYSTALS, GOLD, FILMS, TANTALUM, FARADAY CUPS
Classification Code:PACS: 61.70.Tm, 85.30.- z, 07.50. + f, 61.72.U-, 07.50.-e
Record Number:CaltechAUTHORS:20120726-110219420
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:20120726-110219420
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Official Citation: Diagnostic test for ion implantation dosimetry S. Matteson, D. G. Tonn, and M.‐A. Nicolet J. Vac. Sci. Technol. 16, 882 (1979); http://dx.doi.org/10.1116/1.570106
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:32745
Collection:CaltechAUTHORS
Deposited By: Ruth Sustaita
Deposited On:30 Jul 2012 16:06
Last Modified:26 Dec 2012 15:44

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