Osbourn, G. C. and Smith, D. L. (1979) Carrier transport coefficients across GaAs-GaAIAs (100) interfaces. Journal of Vacuum Science and Technology, 16 (5). pp. 1529-1532. ISSN 0022-5355. http://resolver.caltech.edu/CaltechAUTHORS:20120726-112918493
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We present calculations of reflection and transmission coefficients for electrons and holes at (100) interfaces for the GaAs–Ga_(1–x)Al_xAs system. We consider semi‐infinite crystals of the two semiconductors joined at an abrupt or compositionally graded interface. The calculations are performed using the empirical tight binding approximation. The transport coefficients were computed as a function of the components of the incident carrier wavevector normal and parallel to the interface. We have investigated the transport coefficients for incident states near various band minima into different final state channels. The transmission into states with qualitatively similar character to the incident state is found to be much greater than transmission into states of different character. For example, an electron near the X minimum normal to the interface in Ga_(1–xAl_xAs transmits into the X valley of GaAs with much greater probability than it transmits into the Γ minimum of GaAs. We have investigated the dependence of the transport coefficients on alloy composition. The effect of compositional grading of the interface on the transport coefficients has also been investigated.
|Additional Information:||© 1979 American Vacuum Society. (Received 26 June 1979; accepted 22 August 1979. The authors acknowledge many useful conversations with J. N. Schulman and T. C. McGill. This work was supported in part by the Department of Energy. One of us (DLS) acknowledges receipt of a fellowship from the Alfred P. Sloan Foundation.|
|Subject Keywords:||INTERFACES, ELECTRONS, HOLES, REFLECTION, TRANSMISSION, LCAO METHOD, BAND THEORY, CHARGED−PARTICLE TRANSPORT, BLOCK THEORY|
|Classification Code:||PACS: 73.40.Lq, 72.80.Ey, 71.25.Cx, 71.15.-m|
|Official Citation:||Carrier transport coefficients across GaAs–GaAlAs (100) interfaces G. C. Osbourn and D. L. Smith J. Vac. Sci. Technol. 16, 1529 (1979); http://dx.doi.org/10.1116/1.570242|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Ruth Sustaita|
|Deposited On:||26 Jul 2012 21:50|
|Last Modified:||26 Dec 2012 15:44|
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