von Allmen, M. and Lüthy, W. and Thomas, J. P. and Fallavier, M. and Mackowski, J. M. and Kirsch, R. and Nicolet, M-A. and Roulet, M. E. (1979) Influence of the absorption coefficient in Nd laser annealing of amorphized semiconductor layers. Applied Physics Letters, 34 (1). pp. 82-84. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:20120727-101306063
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It is shown that epitaxial regrowth of thin amorphized Si layers by Nd‐laser irradiation is strongly affected by temperature‐induced changes in the absorptivity of the crystalline substrates. This results in an amplification of small spatial variations of the absorbed intensity by local thermal runaway. The problem can be avoided by either preheating the sample or by applying pulses of long duration and reduced intensity. A model explaining the observations is proposed.
|Additional Information:||© 1979 American Institute of Physics. Received 25 August 1978; accepted for publication 12 October 1978. Online Publication Date: 7 August 2008. Work supported in part by the Swiss Commission for the Encouragement of Scientific Research. We thank E. Rimini (Catania), S.S. Lau, S. Matteson, and G. Chapman (Pasadena) for providing samples. We also thank the atomic collision group of the IPN in Lyon for assistance in the channeling experiments and H.P. Weber (Bern) for his stimulating interest.|
|Classification Code:||PACS: 79.20.Ds, 68.55.-a, 81.40.Ef, 42.62.-b|
|Official Citation:||Influence of the absorption coefficient in Nd laser annealing of amorphized semiconductor layers M. von Allmen, W. Lüthy, J. P. Thomas, M. Fallavier, J. M. Mackowski, R. Kirsch, M‐A. Nicolet, and M. E. Roulet Appl. Phys. Lett. 34, 82 (1979); http://dx.doi.org/10.1063/1.90568|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Ruth Sustaita|
|Deposited On:||30 Jul 2012 15:27|
|Last Modified:||26 Dec 2012 15:45|
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