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Combinatorial approaches toward patterning nanocrystals

Vossmeyer, T. and Jia, S. and Delonno, E. and Diehl, M. R. and Kim, S.-H. and Peng, X. and Alivisatos, A. P. and Heath, J. R. (1998) Combinatorial approaches toward patterning nanocrystals. Journal of Applied Physics, 84 (7). pp. 3664-3670. ISSN 0021-8979. http://resolver.caltech.edu/CaltechAUTHORS:VOSjap98

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Abstract

A scheme for generating complex, spatially separated patterns of multiple types of semiconducting and/or metallic nanocrystals is presented. The process is based on lithographic patterning of organic monolayers that contain a photolabile protection group and are covalently bound to SiO2 surfaces. The process results in spatially and chemically distinct interaction sites on a single substrate. Nanocrystal assembly occurs with a high selectivity on just one type of site. We report on the production of binary, tertiary, and quatemary patterns of nanocrystals. We highlight and discuss the differences between nanocrystal/substrate assembly and molecule/substrate assembly. Finally, we investigate the assembled structures using photoluminescence and absorption spectroscopy.


Item Type:Article
Additional Information:©1998 American Institute of Physics. (Received 7 April 1998; accepted 7 July 1998) This work was part of a joint UCLA/UC Berkeley/Hewlett Packard effort supported by an NSF-GOALI Grant. One of the authors (J.R.H.) also acknowledges support from the David and Lucile Packard Foundation, and a Sloan Fellowship. One of the authors (T.L.V.) would like to thank the Deutsche Forschungsgemeinschaft (DFG) for partial support.
Subject Keywords:nanotechnology; lithography
Record Number:CaltechAUTHORS:VOSjap98
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:VOSjap98
Alternative URL:http://dx.doi.org/10.1063/1.368542
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:3285
Collection:CaltechAUTHORS
Deposited By: Archive Administrator
Deposited On:25 May 2006
Last Modified:26 Dec 2012 08:53

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