Mayer, J. W. and Tu, K. N. (1974) Analysis of thin-film structures with nuclear backscattering and x-ray diffraction. Journal of Vacuum Science and Technology, 11 (1). pp. 86-93. ISSN 0022-5355. http://resolver.caltech.edu/CaltechAUTHORS:20120803-110024013
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Backscattering of MeV ^(4)He ions and Seemann-Bohlin x-ray diffraction techniques have been used to study silicide formation on Si and SiO_2 covered with evaporated metal films. Backscattering techniques provide information on the composition of thin-film structures as a function of depth. The glancing-angle x-ray technique provides identification of phases and structural information. Examples are given of V on Si and on SiO_2 to illustrate the major features of these analysis techniques. We also give a general review of recent studies of silicide formation.
|Additional Information:||© 1974 American Vacuum Society. Received 29 August 1973. The authors acknowledge with pleasure discussions with our colleagues: C. J. Kircher and J. F. Ziegler at IBM; M-A. Nicolet, W-K. Chu, and H. Kraütle at Cal tech. The authors also thank H. Kraütle for his data on V-Si and V-SiO_2. Work supported in part by A. F. Cambridge Research Laboratories. Work supported in part by ARPA Contract No. F19628-73-C- 0006 administered by AFCRL.|
|Classification Code:||PACS: 68.55.-a; 82.80.Yc; 61.05.cm|
|Official Citation:||Analysis of thin-film structures with nuclear backscattering and x-ray diffraction J. W. Mayer and K. N. Tu, J. Vac. Sci. Technol. 11, 86 (1974), DOI:10.1116/1.1318668|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Aucoeur Ngo|
|Deposited On:||03 Aug 2012 18:16|
|Last Modified:||26 Dec 2012 15:49|
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