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30% external quantum efficiency from surface textured, thin-film light-emitting diodes

Schnitzer, I. and Yablonovitch, E. and Caneau, C. and Gmitter, T. J. and Scherer, A. (1993) 30% external quantum efficiency from surface textured, thin-film light-emitting diodes. Applied Physics Letters, 63 (16). pp. 2174-2176. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:SCHNapl93

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Abstract

There is a significant gap between the internal efficiency of light-emitting diodes (LEDs) and their external efficiency. The reason for this shortfall is the narrow escape cone for light in high refractive index semiconductors. We have found that by separating thin-film LEDs from their substrates (by epitaxial lift-off, for example), it is much easier for light to escape from the LED structure and thereby avoid absorption. Moreover, by nanotexturing the thin-film surface using "natural lithography," the light ray dynamics becomes chaotic, and the optical phase-space distribution becomes "ergodic," allowing even more of the light to find the escape cone. We have demonstrated 30% external efficiency in GaAs LEDs employing these principles.


Item Type:Article
Additional Information:Copyright © 1993 American Institute of Physics. Received 9 April 1993; accepted 9 August 1993. The authors thank H. W. Deckman, S. A. Schwarz of DARPA and ONR under Contract No. N0014-93-1-0311.
Subject Keywords:LIGHT EMITTING DIODES; EFFICIENCY; COUPLING; SURFACE TREATMENTS; TEXTURE; THIN FILMS; GALLIUM ARSENIDES; ENERGY LOSSES; NANOSTRUCTURES
Record Number:CaltechAUTHORS:SCHNapl93
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:SCHNapl93
Alternative URL:http://dx.doi.org/10.1063/1.110575
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:3299
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:26 May 2006
Last Modified:26 Dec 2012 08:53

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