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Heterostructure by solid‐phase epitaxy in the Si〈111〉/Pd/Si (amorphous) system

Lau, S. S. and Liau, Z. L. and Nicolet, M-A. and Mayer, J. W. (1977) Heterostructure by solid‐phase epitaxy in the Si〈111〉/Pd/Si (amorphous) system. Journal of Applied Physics, 48 (3). pp. 917-919. ISSN 0021-8979. http://resolver.caltech.edu/CaltechAUTHORS:20120808-085747179

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Abstract

When a thin film of Pd reacts with a 〈111〉 Si substrate, a layer of epitaxial Pd_2Si is formed. It is shown that Si can grow epitaxially on such a layer by solid‐phase reaction.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1063/1.323708DOIUNSPECIFIED
http://jap.aip.org/resource/1/japiau/v48/i3/p917_s1PublisherUNSPECIFIED
Additional Information:© 1977 American Institute of Physics. Received 15 October 1976. Online Publication Date: 26 August 2008. The financial support of the Office of Naval Research ( L. Cooper and D. Ferry) is gratefully acknowledged. The authors are also thankful to J. Mallory and R. Gorris for technical assistance and to C. Canali and S. U. Campisano for helpful discussions,
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Office of Naval ResearchUNSPECIFIED
Classification Code:PACS: 68.55.-a, 68.55.+b
Record Number:CaltechAUTHORS:20120808-085747179
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:20120808-085747179
Official Citation: Heterostructure by solid‐phase epitaxy in the Si 〈111〉/Pd/Si (amorphous) system S. S. Lau, Z. L. Liau, M‐A. Nicolet, and J. W. Mayer J. Appl. Phys. 48, 917 (1977); http://dx.doi.org/10.1063/1.323708
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:33006
Collection:CaltechAUTHORS
Deposited By: Ruth Sustaita
Deposited On:08 Aug 2012 16:18
Last Modified:26 Dec 2012 15:52

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