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Low-Temperature Migration of Silicon in Metal Films on Silicon Substrates Studied by Backscattering Techniques

Hiraki, Aiko and Lugujjo, Eriabu (1972) Low-Temperature Migration of Silicon in Metal Films on Silicon Substrates Studied by Backscattering Techniques. Journal of Vacuum Science and Technology, 9 (1). pp. 155-158. ISSN 0022-5355. http://resolver.caltech.edu/CaltechAUTHORS:20120808-113256086

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Abstract

The backscattering method using 2-MeV^(4)He^(+) ions is employed to obtain microscopic information about solid-solid reaction of Si with thin layers (200∼4000 Å) of Au, Ag, and Al which are vacuum evaporated onto Si crystal substrates. The interesting observation is the migration of Si atoms into these metal films at temperatures (for example, 150°C in Au, 400°C in Ag) well below their eutectic points (375°C for Au and 850°C for Ag). This phenomenon also indicates that at these low temperatures the dislodgment of Si atoms from tightly bound Si crystal does occur. Our experiments clarify that the origin of this effect is the interaction of Si with metals at the interface.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1116/1.1316540DOIUNSPECIFIED
http://avspublications.org/jvst/resource/1/jvstal/v9/i1/p155_s1PublisherUNSPECIFIED
Additional Information:© 1972 American Vacuum Society. Received 28 July 1971. The authors express their sincere thanks to Professors J. W. Mayer, J. O. McCaldin, and M-A. Nicolet for their interest and fruitful discussions. Work supported in part by the Office of Naval Research. Supported by African-American Institute Fellowship.
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Funding AgencyGrant Number
Office of Naval Research (ONR)UNSPECIFIED
African-American Institute FellowshipUNSPECIFIED
Classification Code:PACS: 66.30.J-; 68.35.Fx; 61.05.Np
Record Number:CaltechAUTHORS:20120808-113256086
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:20120808-113256086
Official Citation:Low-Temperature Migration of Silicon in Metal Films on Silicon Substrates Studied by Backscattering Techniques Akio Hiraki and Eriabu Lugujjo, J. Vac. Sci. Technol. 9, 155 (1972), DOI:10.1116/1.1316540
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:33018
Collection:CaltechAUTHORS
Deposited By: Aucoeur Ngo
Deposited On:08 Aug 2012 21:36
Last Modified:26 Dec 2012 15:53

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