Hiraki, Aiko and Lugujjo, Eriabu (1972) Low-Temperature Migration of Silicon in Metal Films on Silicon Substrates Studied by Backscattering Techniques. Journal of Vacuum Science and Technology, 9 (1). pp. 155-158. ISSN 0022-5355 http://resolver.caltech.edu/CaltechAUTHORS:20120808-113256086
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The backscattering method using 2-MeV^(4)He^(+) ions is employed to obtain microscopic information about solid-solid reaction of Si with thin layers (200∼4000 Å) of Au, Ag, and Al which are vacuum evaporated onto Si crystal substrates. The interesting observation is the migration of Si atoms into these metal films at temperatures (for example, 150°C in Au, 400°C in Ag) well below their eutectic points (375°C for Au and 850°C for Ag). This phenomenon also indicates that at these low temperatures the dislodgment of Si atoms from tightly bound Si crystal does occur. Our experiments clarify that the origin of this effect is the interaction of Si with metals at the interface.
|Additional Information:||© 1972 American Vacuum Society. Received 28 July 1971. The authors express their sincere thanks to Professors J. W. Mayer, J. O. McCaldin, and M-A. Nicolet for their interest and fruitful discussions. Work supported in part by the Office of Naval Research. Supported by African-American Institute Fellowship.|
|Classification Code:||PACS: 66.30.J-; 68.35.Fx; 61.05.Np|
|Official Citation:||Low-Temperature Migration of Silicon in Metal Films on Silicon Substrates Studied by Backscattering Techniques Akio Hiraki and Eriabu Lugujjo, J. Vac. Sci. Technol. 9, 155 (1972), DOI:10.1116/1.1316540|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Aucoeur Ngo|
|Deposited On:||08 Aug 2012 21:36|
|Last Modified:||26 Dec 2012 15:53|
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