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Highly electronegative metallic contacts to semiconductors using polymeric sulfur nitride

Scranton, R. A. and Mooney, J. B. and McCaldin, J. O. and McGill, T. C. and Mead, C. A. (1976) Highly electronegative metallic contacts to semiconductors using polymeric sulfur nitride. Applied Physics Letters, 29 (1). pp. 47-48. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:20120808-132551604

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Abstract

The Schottky barriers formed on n‐ZnS and n‐ZnSe by polymeric sulfur nitride have been compared to barriers formed by Au. Barrier energies as determined by photoresponse, current‐voltage, and capacitance‐voltage methods show that (SN)_x is approximately 1.0 eV higher than Au on n‐ZnS and 0.3–0.4 eV higher than Au on n‐ZnSe. We believe that this is the first report of any metallic contact more electronegative than Au.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1063/1.88868 DOIUNSPECIFIED
http://apl.aip.org/resource/1/applab/v29/i1/p47_s1PublisherUNSPECIFIED
Additional Information:© 1976 American Institute of Physics. Received 19 March 1976. Work supported in part by the Office of Naval Research (D. Ferry).
Funders:
Funding AgencyGrant Number
Office of Naval Research (ONR)UNSPECIFIED
Classification Code:PACS: 73.30.+y; 73.40.Cg; 73.40.Ns; 85.30.-z
Record Number:CaltechAUTHORS:20120808-132551604
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:20120808-132551604
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:33020
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:08 Aug 2012 20:56
Last Modified:26 Dec 2012 15:53

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