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Kinetics of silicide formation by thin films of V on Si and SiO_2 substrates

Kräutle, H. and Nicolet, M-A. and Mayer, J. W. (1974) Kinetics of silicide formation by thin films of V on Si and SiO_2 substrates. Journal of Applied Physics, 45 (8). pp. 3304-3308. ISSN 0021-8979. http://resolver.caltech.edu/CaltechAUTHORS:20120809-110703213

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Abstract

The reaction rate of vacuum‐evaporated films of V of the order of 1000 Å thick is investigated by MeV He backscattering spectrometry. On substrates of single‐crystal Si and for anneal times up to several hours in the temperature range 570–650°C, VSi_2 is formed at a linear rate in time. The activation energy of the process is 1.7±0.2 eV. The presence of oxygen in amounts of 10% can significantly decelerate the reaction. On substrates of SiO_2 in the temperature range 730–820°C and anneal times of several hours or less, V_3Si is formed at a square‐root rate in time. The activation energy of this process is 2.0±0.2 eV.


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http://dx.doi.org/10.1063/1.1663776DOIUNSPECIFIED
http://jap.aip.org/resource/1/japiau/v45/i8/p3304_s1PublisherUNSPECIFIED
Additional Information:© 1974 American Institute of Physics. Received 6 February 1974. The authors acknowledge helpful discussions with W. K. Chu and J. O. McCaldin. They also thank K.-N. Tu, of IBM, Thomas J. Watson Research Center, for his collaboration and the x-ray analyses of silicide films. Work supported by the Air Force Cambridge Research Laboratory (D. E. Davies).
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Air Force Cambridge Research LaboratoriesUNSPECIFIED
Record Number:CaltechAUTHORS:20120809-110703213
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:20120809-110703213
Official Citation:Kinetics of silicide formation by thin films of V on Si and SiO[sub 2] substrates H. Krautle, M-A. Nicolet, and J. W. Mayer, J. Appl. Phys. 45, 3304 (1974), DOI:10.1063/1.1663776
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ID Code:33050
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Deposited By: Aucoeur Ngo
Deposited On:09 Aug 2012 18:31
Last Modified:26 Dec 2012 15:55

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