Kräutle, H. and Nicolet, M-A. and Mayer, J. W. (1974) Kinetics of silicide formation by thin films of V on Si and SiO_2 substrates. Journal of Applied Physics, 45 (8). pp. 3304-3308. ISSN 0021-8979 http://resolver.caltech.edu/CaltechAUTHORS:20120809-110703213
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The reaction rate of vacuum‐evaporated films of V of the order of 1000 Å thick is investigated by MeV He backscattering spectrometry. On substrates of single‐crystal Si and for anneal times up to several hours in the temperature range 570–650°C, VSi_2 is formed at a linear rate in time. The activation energy of the process is 1.7±0.2 eV. The presence of oxygen in amounts of 10% can significantly decelerate the reaction. On substrates of SiO_2 in the temperature range 730–820°C and anneal times of several hours or less, V_3Si is formed at a square‐root rate in time. The activation energy of this process is 2.0±0.2 eV.
|Additional Information:||© 1974 American Institute of Physics. Received 6 February 1974. The authors acknowledge helpful discussions with W. K. Chu and J. O. McCaldin. They also thank K.-N. Tu, of IBM, Thomas J. Watson Research Center, for his collaboration and the x-ray analyses of silicide films. Work supported by the Air Force Cambridge Research Laboratory (D. E. Davies).|
|Official Citation:||Kinetics of silicide formation by thin films of V on Si and SiO[sub 2] substrates H. Krautle, M-A. Nicolet, and J. W. Mayer, J. Appl. Phys. 45, 3304 (1974), DOI:10.1063/1.1663776|
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|Deposited By:||Aucoeur Ngo|
|Deposited On:||09 Aug 2012 18:31|
|Last Modified:||26 Dec 2012 15:55|
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