Williams, W. and Trajmar, S. and Bozinis, D. G. (1975) Elastic and inelastic scattering of 40 eV electrons from atomic and molecular bismuth. Journal of Physics B: Atomic and Molecular Physics, 8 (6). L96-L99. ISSN 0022-3700 http://resolver.caltech.edu/CaltechAUTHORS:20120814-134308446
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Differential and integral electron impact cross sections for elastic scattering and for excitation of the first four electronic states of bismuth have been determined at 40 eV impact energy. The cross sections were normalized to the absolute scale by using the optical f-value of the 6p^27s ^4P_(1/2) transition. The integral cross sections for elastic scattering (6p^3 ^4S_(3/2)) and for the excitation of the 6p^3 ^2D_(3/2), ^2D_(5/2), ^2P_(1/2) and 6p^27s^4P_(1/2) states are: 45.0, 0.29, 0.46, 0.17 and 3.8*10^(-16) cm^2, respectively. Inelastic scattering from Bi2 molecules was also detected.
|Additional Information:||© 1975 Institute of Physics. Received 4 February 1975. This paper presents the results of one phase of research carried out at the Jet Propulsion Laboratory, California Institute of Technology, under Contract No NAS7-100, sponsored by the National Aeronautics and Space Administration.|
|Subject Keywords:||Atomic and molecular physics|
|Classification Code:||PACS: 34.80.Bm, 34.80.Gs, 34.80.Dp, 34.50.-s|
|Official Citation:||Elastic and inelastic scattering of 40 eV electrons from atomic and molecular bismuth W Williams, S Trajmar and D G Bozinis doi:10.1088/0022-3700/8/6/006|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Ruth Sustaita|
|Deposited On:||14 Aug 2012 21:02|
|Last Modified:||14 Aug 2012 21:02|
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