Reid, J. S. and Kolawa, E. and Garland, C. M. and Nicolet, M-A. and Cardone, F. and Gupta, D. and Ruiz, R. P. (1996) Amorphous (Mo, Ta, or W)–Si–N diffusion barriers for Al metallizations. Journal of Applied Physics, 79 (2). pp. 1109-1117. ISSN 0021-8979. http://resolver.caltech.edu/CaltechAUTHORS:REIjap96
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M–Si–N and M–Si (M=Mo, Ta, or W) thin films, reactively sputtered from M5Si3 and WSi2 targets, are examined as diffusion barriers for aluminum metallizations of silicon. Methods of analysis include electrical tests of shallow-junction diodes, 4He + + backscattering spectrometry, x-ray diffraction, transmission electron microscopy, scanning electron microscopy, and secondary-ion-mass spectrometry. At the proper compositions, the M–Si–N films prevent Al overlayers from electrically degrading shallow-junction diodes after 10 min anneals above the melting point of aluminum. Secondary-ion-mass spectrometry indicates virtually no diffusivity of Al into the M–Si–N films during a 700 °C/10 h treatment. The stability can be partially attributed to a self-sealing 3-nm-thick AlN layer that grows at the M–Si–N/Al interface, as seen by transmission electron microscopy.
|Additional Information:||©1996 American Institute of Physics. (Received 16 January 1995; accepted 29 September 1995) The authors thank Bruce Gorris for technical assistance. Financial support for this work was provided by the Army Research Office. The shallow-junction diodes used in our evaluations were fabricated by Sandia National Laboratories, Albuquerque. J.S.R. gratefully acknowledges a fellowship from the Intel Foundation.|
|Subject Keywords:||ALUMINIUM; DIFFUSION BARRIERS; METALLIZATION; MOLYBDENUM SILICIDES; NITRIDES; RBS; SEM; SIMS; TANTALUM SILICIDES; TEM; THIN FILMS; TUNGSTEN SILICIDES; XRD|
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|Deposited On:||01 Jun 2006|
|Last Modified:||26 Dec 2012 08:53|
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