Denda, S. and Nicolet, M-A. (1966) Pure Space-Charge-Limited Electron Current in Silicon. Journal of Applied Physics, 37 (6). pp. 2412-2424. ISSN 0021-8979. http://resolver.caltech.edu/CaltechAUTHORS:20120828-070404189
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Phosphorus diffusion on π‐type silicon is used to fabricate n^+πn^+ structures of base widths between 3 μ and 60 μ with π‐type resistivities of 300 Ω⋅cm and 8 kΩ⋅cm. The V‐I characteristics of the structures are measured at room temperature and at liquid‐nitrogen temperature. The change in current for constant applied voltage is also observed in that temperature range. The results are interpreted in terms of simple models based on the assumption that pure space‐charge‐limited current of electrons is present. The models describe well the characteristics measured on 300‐Ω⋅cm samples, except for the range of small biases on the thinnest samples. It is concluded that the drift velocity of electrons at 78°K tends towards saturation at 1.0×10^7 cm∕sec ± 10%. The current observed at this temperature actually reaches this value. The critical electric field at 78°K is 10^3 V∕cm±30% but the meaning of this concept for electrons in silicon is vague. The temperature dependence of the current at fixed bias voltages is in general agreement with the variation of the low field mobility. Results obtained on 8‐kΩ⋅cm samples need clarification. Effects of breakdown and trapping are not observed.
|Additional Information:||© 1966 The American Institute of Physics. Received 29 October 1965; in final form 27 December 1965. Online Publication Date: 17 June 2004. Our acknowledgments go to A. Shumka for valuable discussions, to the U.S. Naval Ordnance Test Station, Pasadena Annex, and to the Jet Propulsion Laboratory, who have, contributed in parts to the financial support of this work.|
|Official Citation:||Pure Space‐Charge‐Limited Electron Current in Silicon S. Denda and M‐A. Nicolet J. Appl. Phys. 37, 2412 (1966); http://dx.doi.org/10.1063/1.1708829|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Ruth Sustaita|
|Deposited On:||28 Aug 2012 14:33|
|Last Modified:||26 Dec 2012 16:03|
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