Kewitsch, Anthony S. and Yariv, Amnon (1996) Nonlinear optical properties of photoresists for projection lithography. Applied Physics Letters, 68 (4). pp. 455-457. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:KEWapl96
See Usage Policy.
Use this Persistent URL to link to this item: http://resolver.caltech.edu/CaltechAUTHORS:KEWapl96
Optical beams are self-focused and self-trapped upon initiating crosslinking in photoresists. This nonlinear optical phenomenon is apparent only for low average optical intensities and produces index of refraction changes as large as 0.04. We propose using the self-focusing and self-trapping phenomenon in projection photolithography to enhance the resolution and depth of focus.
|Additional Information:||©1996 American Institute of Physics (Received 8 September 1995; accepted 14 November 1995) This work was supported by ARPA’s nonlinear optics (DSO) and lithography (MTO) programs.|
|Subject Keywords:||CROSS–LINKING; LITHOGRAPHY; NONLINEAR OPTICS; PHOTORESISTS; REFRACTIVE INDEX; SELF–FOCUSING; SPATIAL RESOLUTION; TRAPPING|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Archive Administrator|
|Deposited On:||01 Jun 2006|
|Last Modified:||26 Dec 2012 08:53|
Repository Staff Only: item control page