CaltechAUTHORS
  A Caltech Library Service

Synthesis of epitaxial SnxGe1–x alloy films by ion-assisted molecular beam epitaxy

He, Gang and Atwater, Harry A. (1996) Synthesis of epitaxial SnxGe1–x alloy films by ion-assisted molecular beam epitaxy. Applied Physics Letters, 68 (5). pp. 664-666. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:HEGapl96

[img]
Preview
PDF
See Usage Policy.

66Kb

Use this Persistent URL to link to this item: http://resolver.caltech.edu/CaltechAUTHORS:HEGapl96

Abstract

In this letter, we report the synthesis of epitaxial SnxGe1–x/Ge/Si(001) with compositions up to x=0.34 by ion-assisted molecular beam epitaxy with 30–100 eV Ar+ ions produced by an electron cyclotron resonance ionization source with ion to atom flux ratios of the order of unity in the substrate temperature range of 120–200 °C. High flux low energy ion beam irradiation greatly inhibits Sn segregation without interrupting epitaxy.


Item Type:Article
Additional Information:©1996 American Institute of Physics. (Received 12 July 1995; accepted 21 November 1995) This work was supported by the National Science Foundation under Grant No. DMR-9503210. We also acknowledge the expert technical assistance of M. Easterbrook and C. M. Garland.
Subject Keywords:CHEMICAL COMPOSITION; EFFECTIVE MASS; GERMANIUM ALLOYS; ION BEAMS; MOLECULAR BEAM EPITAXY; RBS; RHEED; SEGREGATION; SYNTHESIS; TIN ALLOYS; XRD
Record Number:CaltechAUTHORS:HEGapl96
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:HEGapl96
Alternative URL:http://dx.doi.org/10.1063/1.116502
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:3360
Collection:CaltechAUTHORS
Deposited By: Archive Administrator
Deposited On:01 Jun 2006
Last Modified:26 Dec 2012 08:53

Repository Staff Only: item control page