He, Gang and Atwater, Harry A. (1996) Synthesis of epitaxial SnxGe1–x alloy films by ion-assisted molecular beam epitaxy. Applied Physics Letters, 68 (5). pp. 664-666. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:HEGapl96
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Abstract
In this letter, we report the synthesis of epitaxial SnxGe1–x/Ge/Si(001) with compositions up to x=0.34 by ion-assisted molecular beam epitaxy with 30–100 eV Ar+ ions produced by an electron cyclotron resonance ionization source with ion to atom flux ratios of the order of unity in the substrate temperature range of 120–200 °C. High flux low energy ion beam irradiation greatly inhibits Sn segregation without interrupting epitaxy.
| Item Type: | Article |
|---|---|
| Additional Information: | ©1996 American Institute of Physics. (Received 12 July 1995; accepted 21 November 1995) This work was supported by the National Science Foundation under Grant No. DMR-9503210. We also acknowledge the expert technical assistance of M. Easterbrook and C. M. Garland. |
| Subject Keywords: | CHEMICAL COMPOSITION; EFFECTIVE MASS; GERMANIUM ALLOYS; ION BEAMS; MOLECULAR BEAM EPITAXY; RBS; RHEED; SEGREGATION; SYNTHESIS; TIN ALLOYS; XRD |
| Record Number: | CaltechAUTHORS:HEGapl96 |
| Persistent URL: | http://resolver.caltech.edu/CaltechAUTHORS:HEGapl96 |
| Alternative URL: | http://dx.doi.org/10.1063/1.116502 |
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. |
| ID Code: | 3360 |
| Collection: | CaltechAUTHORS |
| Deposited By: | Archive Administrator |
| Deposited On: | 01 Jun 2006 |
| Last Modified: | 26 Dec 2012 08:53 |
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