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Microstructure and properties of single crystal BaTiO3 thin films synthesized by ion implantation-induced layer transfer

Park, Young-Bae and Ruglovsky, Jennifer L. and Atwater, Harry A. (2004) Microstructure and properties of single crystal BaTiO3 thin films synthesized by ion implantation-induced layer transfer. Applied Physics Letters, 85 (3). pp. 455-457. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:PARapl04

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Abstract

Single crystal BaTiO3 thin films have been transferred onto Pt-coated and Si3N4-coated substrates by the ion implantation-induced layer transfer method using H+ and He+ ion coimplantation and subsequent annealing. The transferred BaTiO3 films are single crystalline with root mean square roughness of 17 nm. Polarized optical and piezoresponse force microscopy (PFM) indicate that the BaTiO3 film domain structure closely resembles that of bulk tetragonal BaTiO3 and atomic force microscopy shows a 90degrees a-c domain structure with a tetragonal angle of 0.5degrees-0.6degrees. Micro-Raman spectroscopy indicates that the local mode intensity is degraded in implanted BaTiO3 but recovers during anneals above the Curie temperature. The piezoelectric coefficient, d(33), is estimated from PFM to be 80-100 pm/V and the coercive electric field (E-c) is 12-20 kV/cm, comparable to those in single crystal BaTiO3.


Item Type:Article
Additional Information:©2004 American Institute of Physics. Received 26 January 2004; accepted 25 May 2004. This work was supported by the Army Research Office (ARO-MURI) under Grant No. DAAD 19-01-1-0517. One of the authors (Y.-B.P.) wishes to acknowledge support by the Postdoctoral Fellowship Program of the Korea Science and Engineering Foundation (KOSEF).
Subject Keywords:barium compounds; piezoelectric thin films; ferroelectric Curie temperature; crystal microstructure; ion implantation; annealing; surface roughness; optical microscopy; atomic force microscopy; electric domains; Raman spectra; ferroelectric materials; piezoelectricity; ferroelectric thin films; coating techniques; hydrogen; helium
Record Number:CaltechAUTHORS:PARapl04
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:PARapl04
Alternative URL:http://dx.doi.org/10.1063/1.1773373
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:3406
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:06 Jun 2006
Last Modified:26 Dec 2012 08:54

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