CaltechAUTHORS
  A Caltech Library Service

Precipitation of Si from the Al metallization of integrated circuits

McCaldin, J. O. and Sankur, H. (1972) Precipitation of Si from the Al metallization of integrated circuits. Applied Physics Letters, 20 (4). pp. 171-172. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:MCCapl72

[img]
Preview
PDF
See Usage Policy.

166Kb

Use this Persistent URL to link to this item: http://resolver.caltech.edu/CaltechAUTHORS:MCCapl72

Abstract

The Al metallization of integrated circuits is known to dissolve 1/2% or more Si, but the ultimate location of this Si has been uncertain. An electron microprobe operated at low beam energy so as to penetrate only the upper portion of the metallization was used to follow the movement of dissolved Si on cooling after the "forming" heat treatment. Dissolved Si substantially less than a diffusion length from the substrate was found to regrow there; elsewhere the Si forms precipitates in the Al matrix, preferentially near the free surface of the Al.


Item Type:Article
Additional Information:©1972 The American Institute of Physics. Received 1 November 1971; revised 6 December 1971. The authors wish to thank R. Cunningham, who operated the electron microprobe.
Record Number:CaltechAUTHORS:MCCapl72
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:MCCapl72
Alternative URL:http://dx.doi.org/10.1063/1.1654096
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:3408
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:06 Jun 2006
Last Modified:26 Dec 2012 08:54

Repository Staff Only: item control page