Jou, Christina F. and Lam, Wayne W. and Chen, Howard Z. and Stolt, Kjell S. and Luhmann, Neville C., Jr. and Rutledge, David B. (1988) Millimeter-Wave Diode-Grid Frequency Doubler. IEEE Transactions on Microwave Theory and Techniques, 36 (11). pp. 1507-1514. ISSN 0018-9480. http://resolver.caltech.edu/CaltechAUTHORS:JOUieeetmtt88
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Monolithic diode grid were fabricated on 2-cm^2 gallium-arsenide wafers in a proof-of-principle test of a quasi-optical varactor millimeter-wave frequency multiplier array concept. An equivalent circuit model based on a transmission-line analysis of plane wave illumination was applied to predict the array performance. The doubler experiments were performed under far-field illumination conditions. A second-harmonic conversion efficiency of 9.5% and output powers of 0.5 W were achieved at 66 GHz when the diode grid was pumped with a pulsed source at 33 GHz. This grid had 760 Schottky-barrier varactor diodes. The average series resistance was 27 Ω, the minimum capacitance was 18 fF at a reverse breakdown voltage of -3 V. The measurements indicate that the diode grid is a feasible device for generating watt-level powers at millimeter frequencies and that substantial improvement is possible by improving the diode breakdown voltage.
|Additional Information:||© Copyright 1988 IEEE. Reprinted with permission. Manuscript received December 28, 1987; revised May 20, 1988. This work was supported by TRW under the University of California's MICRO program and by the Army Research Office, the U.S. Army Harry Dimond Laboratory, and the Jet Propulsion Laboratory. W. Lam acknowledges the support of an AMOCO Foundation Fellowship. W. Lam would like to thank Dr. C. Zah at Bell Communication Research for showing hm how to fabricate diodes. The authors are indebted to Professors A. Yariv and M.-A. Nicolet at Caltech for the use of their fabrication facilities, and to Professor W. Bridges at Caltech for the loan of millimeter-wave equipment. The authors would also like to thank Dr. T. Kuech at IBM for providing us with MOCVD wafers, Dr. T. Fong and Dr. J. Berenz at TRW, Dr. J. Maserjian and Mr. L. Eng at JPL for providing us with MBE wafers, Dr. H. Yamasaki, Dr. H. Kanber, and Mr. B. Rush at Hughes, and Dr. F. So and Mr. A. Ghaffari at Caltech for providing us with proton implantation.|
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