Kadow, Christopher and Jackson, Andrew W. and Gossard, Arthur C. and Bowers, John E. and Matsuura, Shuji and Blake, Geoffrey A. (2000) Self-assembled ErAs islands in GaAs for THz applications. Physica E, 7 (1-2). pp. 97-100. ISSN 1386-9477 http://resolver.caltech.edu/CaltechAUTHORS:20121008-074839909
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This paper concerns self-assembled ErAs islands in GaAs grown by molecular beam epitaxy. The nucleation of ErAs on GaAs occurs in an island growth mode leading to spontaneous formation of nanometer-sized islands. Pump–probe measurements indicate that the ErAs islands capture photogenerated carriers on a subpicosecond time scale. This together with the high resitivity of the material allows us to use it as a fast photoconductor. The performance of photomixer devices made from this material is discussed.
|Additional Information:||© 2000 Elsevier Science B.V.|
|Subject Keywords:||ErAs islands; Carrier dynamics; THz source|
|Official Citation:||Christoph Kadow, Andrew W Jackson, Arthur C Gossard, John E Bowers, Shuji Matsuura, Geoffrey A Blake, Self-assembled ErAs islands in GaAs for THz applications, Physica E: Low-dimensional Systems and Nanostructures, Volume 7, Issues 1–2, April 2000, Pages 97-100, ISSN 1386-9477, 10.1016/S1386-9477(99)00314-8. (http://www.sciencedirect.com/science/article/pii/S1386947799003148)|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Ruth Sustaita|
|Deposited On:||08 Oct 2012 15:04|
|Last Modified:||08 Oct 2012 15:04|
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