Kalantar, D. H. and Chandler, E. A. and Colvin, J. D. and Lee, R. and Remington, B. A. and Weber, S. V. and Hauer, A. and Wiley, L. G. and Wark, J. S. and Loveridge, A. and Failor, B. H. and Meyers, M. A. and Ravichandran, G. (1999) Transient x-ray diffraction used to diagnose shock compressed Si crystals on the Nova laser. Review of Scientific Instruments, 70 (1). pp. 629-632. ISSN 0034-6748 http://resolver.caltech.edu/CaltechAUTHORS:KALrsi99
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Transient x-ray diffraction is used to record time-resolved information about the shock compression of materials. This technique has been applied on Nova shock experiments driven using a hohlraum x-ray drive. Data were recorded from the shock release at the free surface of a Si crystal, as well as from Si at an embedded ablator/Si interface. Modeling has been done to simulate the diffraction data incorporating the strained crystal rocking curves and Bragg diffraction efficiencies. Examples of the data and post-processed simulations are presented.
|Additional Information:||©1999 American Institute of Physics. Presented on 9 June 1998 The authors acknowledge the technical support of the Nova Operations and Target Fabrication groups. This work was performed under the auspices of the U.S. DOE by LLNL under Contract No. W-7405-ENG-48, and through the Materials Research Institute, LLNL, and the DOE Grants and University Use of Nova Programs.|
|Subject Keywords:||X-RAY DIFFRACTION; COMPRESSION; SHOCK WAVES; NOVA FACILITY; SILICON; PLASMA DIAGNOSTICS; STRAINS; PLASMA SIMULATION; CRYSTAL STRUCTURE; transients; shock measurement; elemental semiconductors; surface structure; compressive testing|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Archive Administrator|
|Deposited On:||08 Jun 2006|
|Last Modified:||26 Dec 2012 08:54|
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