Finstad, T. G. and Nicolet, M-A. (1979) Silicide formation with bilayers of Pd-Pt, Pd-Ni, and Pt-Ni. Journal of Applied Physics, 50 (1). pp. 303-307. ISSN 0021-8979. http://resolver.caltech.edu/CaltechAUTHORS:FINjap79
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Evaporated two-layered thin films of Pd-Ni, Pt-Ni, and Pt-Pd on single-crystal Si have been vacuum annealed in the temperature range 200–900°C. The sequence of films as well as substrate orientation have been varied. The silicide formation has been studied by MeV He + backscattering spectrometry and glancing angle x-ray diffraction. The silicide layers are highly inhomogeneous in the elemental depth distribution for annealing below 600°C. Above 700°C, the distributions become homogeneous. The silicide-substrate interface shows varying sharpness depending upon substrate orientation and evaporation sequence. We suggest the existence of ternary monosilicides of the type Pt1–xPdxSi, Pt1–xNixSi, and Pd1–xNixSi. The Pt1–xPdxSi ternary silicide is stable up to 900°C; the others are not.
|Additional Information:||Copyright © 1979 American Institute of Physics. Received 25 January 1978; accepted for publication 24 May 1978. We appreciate the help and encouragement given by S. S. Lau, J. W. Mayer, J. Mallory, and R. Gorris, all of the California Institute of Technology. [T.G.F.] [w]ork supported by the Office of Naval Research (L.R. Cooper) and the Royal Norwegian Council for Scientific and Industrial Research.|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Tony Diaz|
|Deposited On:||24 Jun 2006|
|Last Modified:||26 Dec 2012 08:55|
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