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Wet oxidation of GeSi at (700)C

Liu, W. S. and Lee, E. W. and Nicolet, M-A. and Arbet-Engels, V. and Wang, K. L. and Abuhadba, N. M. and Aita, C. R. (1992) Wet oxidation of GeSi at (700)C. Journal of Applied Physics, 71 (8). pp. 4015-4018. ISSN 0021-8979. http://resolver.caltech.edu/CaltechAUTHORS:LIUjap92b

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Abstract

About 500-nm-thick films of Ge0.36Si0.64 and Ge0.28Si0.72 grown epitaxially on (100)Si have been oxidized at 700-degrees-C in wet ambient. A uniform GexSi1-xO2 oxide layer forms with a smooth interface between it and the unoxidized GexSi1-x layer below. The composition and structure of that layer remains unchanged as monitored by backscattering spectrometry or cross-sectional transmission electronic microscopy. The oxide of both samples grows as square root of oxidation duration. The parabolic rate constant increases with the Ge content and is larger than that for wet oxidation of pure Si at the same temperature. The absence of a regime of linear growth at this relatively low temperature indicates a much enhanced linear rate constant.


Item Type:Article
Additional Information:© 1992 American institute of Physics. Received 9 December 1991;accepted for publication 13 January 1992. This work was supported by the Semiconductor Research Corporation under a coordinated research program between Caltech (91-ST-lOO).and at UCLA (91-SJ-088). We thank Dr. W. A. Goddard for a useful discussion, J. S. Chen for the transmission electron microscopy study, and R. Gorris for his technical assistance. E. W. Lee acknowledges the support of the Korean Ministry of Education.
Subject Keywords:STRAINED LAYERS; KINETICS; SiGe
Record Number:CaltechAUTHORS:LIUjap92b
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:LIUjap92b
Alternative URL:http://dx.doi.org/10.1063/1.350847
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:3663
Collection:CaltechAUTHORS
Deposited By: Lindsay Cleary
Deposited On:24 Jun 2006
Last Modified:26 Dec 2012 08:55

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