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Epitaxial growth of amorphous Ge films deposited on single-crystal Ge

Grimaldi, M. G. and Mäenpää, M. and Paine, B. M. and Nicolet, M-A. and Lau, S. S. and Tseng, W. F. (1981) Epitaxial growth of amorphous Ge films deposited on single-crystal Ge. Journal of Applied Physics, 52 (3). pp. 1351-1355. ISSN 0021-8979. http://resolver.caltech.edu/CaltechAUTHORS:GRIjap81

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Abstract

The epitaxial growth of amorphous Ge films deposited onto 110 Ge substrate is demonstrated. Substrate cleaning prior to deposition involves only conventional chemical procedures. The growth appears to be a strong function of the interface cleanliness. Two different growth mechanisms are observed: (a) a direct transition from amorphous to single-crystalline layer and (b) the growth involving the transition of amorphous to polycrystals to single crystal.


Item Type:Article
Additional Information:Copyright © 1981 American Institute of Physics. Received 20 October 1980; accepted for publication 2 December 1980. We would like to thank R. Fernandez and R. Gorris for their technical assistance, Dr. J. W. Mayer for clarifying discussions, and Dr. G. Foti for supplying the Ge wafers. The partial financial support by the Office of Naval Research is thankfully acknowledged (L. R. Cooper and G. B. Wright).
Subject Keywords:FILMS; PHASE TRANSFORMATIONS; AMORPHOUS STATE; EPITAXY; DEPOSITION; GERMANIUM; MONOCRYSTALS; CRYSTAL LATTICES; SUBSTRATES; POLYCRYSTALS; DATA
Record Number:CaltechAUTHORS:GRIjap81
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:GRIjap81
Alternative URL:http://dx.doi.org/10.1063/1.329763
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:3859
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:17 Jul 2006
Last Modified:26 Dec 2012 08:56

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