Yu, Hongbin and Webb, Lauren J. and Heath, James R. and Lewis, Nathan S. (2006) Scanning tunneling spectroscopy of methyl- and ethyl-terminated Si(111) surfaces. Applied Physics Letters, 88 (25). Art. No. 252111. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:YUHapl06
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Abstract
Methyl- and ethyl-terminated Si(111) surfaces prepared by a two-step chlorination/alkylation method were characterized by low temperature scanning tunneling spectroscopy (STS). The STS data showed remarkably low levels of midgap states on the CH3- and C2H5-terminated Si surfaces. A large conductance gap relative to the Si band gap was observed for both surfaces as well as for the hydrogen-terminated Si(111) surface. This large gap is ascribed to scanning tunneling microscope tip-induced band bending resulting from a low density of midgap states which avoid pinning of the Fermi levels on these passivated surfaces.
| Item Type: | Article |
|---|---|
| Additional Information: | ©2006 American Institute of Physics (Received 15 December 2005; accepted 30 March 2006; published online 22 June 2006) The authors acknowledge the National Science Foundation, Grant Nos. CHE-0213589 (NSL) and NSF-CCF-05204490, and the MARCO Materials Structures and Devices Focus Center (JRH) for support of this research. One of the authors (L.J.W.) thanks the NSF for a graduate fellowship. The authors thank Peigen Cao for helpful discussions and technical assistance. |
| Subject Keywords: | organic compounds; silicon; elemental semiconductors; scanning tunnelling spectroscopy; energy gap; Fermi level |
| Record Number: | CaltechAUTHORS:YUHapl06 |
| Persistent URL: | http://resolver.caltech.edu/CaltechAUTHORS:YUHapl06 |
| Alternative URL: | http://dx.doi.org/10.1063/1.2203968 |
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. |
| ID Code: | 3870 |
| Collection: | CaltechAUTHORS |
| Deposited By: | Archive Administrator |
| Deposited On: | 17 Jul 2006 |
| Last Modified: | 29 Nov 2009 22:05 |
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