Kacsich, T. and Kolawa, E. and Fleurial, J. P. and Caillat, T. and Nicolet, M.-A. (1998) Films of Ni–7 at% V, Pd, Pt and Ta–Si–N as diffusion barriers for copper on Bi2Te3. Journal of Physics D: Applied Physics, 31 (19). pp. 2406-2411. ISSN 0022-3727. http://resolver.caltech.edu/CaltechAUTHORS:KACjpd98
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Films of Ni–7 at% V, Pt, Pd, and Ta40Si14N46, each approximately 100 nm thick, were magnetron-deposited and interposed between about 250 nm thick copper overlayers and Bi2Te3 single-crystalline substrates. The samples were then annealed in vacuum up to 350 degrees C. The performance of the metal and the tantalum-silicon-nitride films as diffusion barriers for in-diffusion of Cu and out-diffusion of Bi and Te was evaluated by 2.0 MeV 4He backscattering spectrometry and x-ray diffraction. The Ni–7 at% V, Pd and Pt films all fail to prevent interdiffusion of Cu and Bi2Te3 after a few hours of annealing at 200 degrees C. However, the Ta40Si14N46 barrier preserves the integrity of the contact after 250 degrees C for 50 h and 350 degrees C for 1 h anneals. These results confirm the superior characteristics of the metal-silicon-nitride films as diffusion barriers.
|Additional Information:||© 1998 IOP Publishing Ltd. Received 7 April 1998. The authors thank Dr K Kawamura (Fujitsu Co, Atsugi, Japan) for his help in depositing the Ta–Si–N films. The Office of Naval Research, USA, and the Deutsche Forschungsgemeinschaft, Germany, have supported this work financially.|
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|Deposited On:||08 Jun 2005|
|Last Modified:||26 Dec 2012 08:40|
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