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Low-temperature migration of silicon in thin layers of gold platinum

Hiraki, A. and Nicolet, M-A. and Mayer, J. W. (1971) Low-temperature migration of silicon in thin layers of gold platinum. Applied Physics Letters, 18 (5). pp. 178-181. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:HIRapl71

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Abstract

The backscattering method is employed to obtain microscopic information about solid-solid reactions of Si with thin layers (500–2000 Å) of both vacuum-evaporated Au and sputtered Pt. A remarkable observation is the migration of Si atoms into Au and Pt at relatively low temperatures (150 and 350 °C, respectively). Migration of Si in Pt induces first the formation of Pt2Si-like compounds and then PtSi. In the AuSi system, on the other hand, Si moves through and accumulates on the Au surface in the form of SiO2 under an oxidizing heat-treatment atmosphere.


Item Type:Article
Additional Information:©1971 The American Institute of Physics. Received 7 January 1971. We are indebted to M. Kamoshida of Nippon Electric Co., IC Division, Kawasaki, Japan, for providing the samples. We also thank James O. McCaldin for his interest and fruitful discussions, and Eriabu Lugujjo for his help.
Record Number:CaltechAUTHORS:HIRapl71
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:HIRapl71
Alternative URL:http://dx.doi.org/10.1063/1.1653615
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:3940
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:20 Jul 2006
Last Modified:26 Dec 2012 08:57

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