Barcz, A. J. and Paine, B. M. and Nicolet, M-A. (1984) Ion mixing of markers in SiO2 and Si. Applied Physics Letters, 44 (1). pp. 45-47. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:BARapl84c
See Usage Policy.
Use this Persistent URL to link to this item: http://resolver.caltech.edu/CaltechAUTHORS:BARapl84c
The amount of atomic mixing in amorphous SiO2 and Si is studied by measuring the redistribution of thin metal markers due to irradiation with 300-keV Xe+ ions. In SiO2, the mixing efficiency appears to be independent of the chemical nature of marker atoms and can be explained in terms of a linear cascade model. In Si, the mixing is found to correlate with thermally activated diffusivities of the marker species.
|Additional Information:||Copyright © 1984 American Institute of Physics (Received 1 August 1983; accepted 2 October 1983) The authors wish to thank A. Ghaffari for technical assistance. The research was supported in part by the General Products Division of IBM, Tuscon, Arizona (T. M. Reith). The authors also acknowledge the cooperation of M. Bartur (Solid-State Devices, Incorporated and Caltech) in preparing the samples.|
|Subject Keywords:||diffusion; xenon ions; cations; physical radiation effects; atom transport; kev range 100–1000; titanium; cobalt; nickel; hafnium; tungsten; platinum; gold; distribution|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Archive Administrator|
|Deposited On:||20 Jul 2006|
|Last Modified:||26 Dec 2012 08:57|
Repository Staff Only: item control page