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Ion mixing of markers in SiO2 and Si

Barcz, A. J. and Paine, B. M. and Nicolet, M-A. (1984) Ion mixing of markers in SiO2 and Si. Applied Physics Letters, 44 (1). pp. 45-47. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:BARapl84c

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Abstract

The amount of atomic mixing in amorphous SiO2 and Si is studied by measuring the redistribution of thin metal markers due to irradiation with 300-keV Xe+ ions. In SiO2, the mixing efficiency appears to be independent of the chemical nature of marker atoms and can be explained in terms of a linear cascade model. In Si, the mixing is found to correlate with thermally activated diffusivities of the marker species.


Item Type:Article
Additional Information:Copyright © 1984 American Institute of Physics (Received 1 August 1983; accepted 2 October 1983) The authors wish to thank A. Ghaffari for technical assistance. The research was supported in part by the General Products Division of IBM, Tuscon, Arizona (T. M. Reith). The authors also acknowledge the cooperation of M. Bartur (Solid-State Devices, Incorporated and Caltech) in preparing the samples.
Subject Keywords:diffusion; xenon ions; cations; physical radiation effects; atom transport; kev range 100–1000; titanium; cobalt; nickel; hafnium; tungsten; platinum; gold; distribution
Record Number:CaltechAUTHORS:BARapl84c
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:BARapl84c
Alternative URL:http://dx.doi.org/10.1063/1.94546
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:3975
Collection:CaltechAUTHORS
Deposited By: Archive Administrator
Deposited On:20 Jul 2006
Last Modified:26 Dec 2012 08:57

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