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Self-confined metallic interconnects for very large scale integration

Bartur, M. and Nicolet, M-A. (1984) Self-confined metallic interconnects for very large scale integration. Applied Physics Letters, 44 (2). pp. 263-264. ISSN 0003-6951.

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A novel method to produce narrow metallic lines is presented. Lines of NiSi2 lithographically formed on SiO2 substrates are oxidized. The formed SiO2 layer consumes most of the Si from the silicide, leaving a metallic Ni line fully confined by SiO2. The associated problems together with the potential utilization are discussed.

Item Type:Article
Additional Information:Copyright © 1984 American Institute of Physics (Received 23 September 1983; accepted 24 October 1983) The authors wish to thank M. Van Rossum for the x-ray analysis, and Solid-State Devices, Inc. (A. Applebaum, President) for partial financial and technical support.
Subject Keywords:vlsi; nickel silicides; silicon oxides; lithography; oxidation; line widths; connectors
Record Number:CaltechAUTHORS:BARapl84a
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:3976
Deposited By: Archive Administrator
Deposited On:20 Jul 2006
Last Modified:26 Dec 2012 08:57

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