Bar-Chaim, N. and Lau, K. Y. and Ury, I. and Yariv, A. (1984) Monolithic optoelectronic integration of a GaAlAs laser, a field-effect transistor, and a photodiode. Applied Physics Letters, 44 (10). pp. 941-943. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:BARapl84b
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Abstract
A low threshold buried heterostructure laser, a metal-semiconductor field-effect transistor, and a p-i-n photodiode have been integrated on a semi-insulating GaAs substrate. The circuit was operated as a rudimentary optical repeater. The gain bandwidth product of the repeater was measured to be 178 MHz.
| Item Type: | Article |
|---|---|
| Additional Information: | Copyright © 1984 American Institute of Physics (Received 9 January 1984; accepted 27 February 1984) This research was supported by the Defense Advanced Research Project Agency and the Naval Research Laboratory. |
| Subject Keywords: | mesfet; photodiodes; operation; integrated optics; gallium arsenides; photodetectors; performance; dh lasers; buried heterostructures; semiconductor lasers; aluminium arsenides |
| Record Number: | CaltechAUTHORS:BARapl84b |
| Persistent URL: | http://resolver.caltech.edu/CaltechAUTHORS:BARapl84b |
| Alternative URL: | http://dx.doi.org/10.1063/1.94598 |
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. |
| ID Code: | 3977 |
| Collection: | CaltechAUTHORS |
| Deposited By: | Archive Administrator |
| Deposited On: | 20 Jul 2006 |
| Last Modified: | 26 Dec 2012 08:57 |
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