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Monolithic optoelectronic integration of a GaAlAs laser, a field-effect transistor, and a photodiode

Bar-Chaim, N. and Lau, K. Y. and Ury, I. and Yariv, A. (1984) Monolithic optoelectronic integration of a GaAlAs laser, a field-effect transistor, and a photodiode. Applied Physics Letters, 44 (10). pp. 941-943. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:BARapl84b

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Abstract

A low threshold buried heterostructure laser, a metal-semiconductor field-effect transistor, and a p-i-n photodiode have been integrated on a semi-insulating GaAs substrate. The circuit was operated as a rudimentary optical repeater. The gain bandwidth product of the repeater was measured to be 178 MHz.


Item Type:Article
Additional Information:Copyright © 1984 American Institute of Physics (Received 9 January 1984; accepted 27 February 1984) This research was supported by the Defense Advanced Research Project Agency and the Naval Research Laboratory.
Subject Keywords:mesfet; photodiodes; operation; integrated optics; gallium arsenides; photodetectors; performance; dh lasers; buried heterostructures; semiconductor lasers; aluminium arsenides
Record Number:CaltechAUTHORS:BARapl84b
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:BARapl84b
Alternative URL:http://dx.doi.org/10.1063/1.94598
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:3977
Collection:CaltechAUTHORS
Deposited By: Archive Administrator
Deposited On:20 Jul 2006
Last Modified:26 Dec 2012 08:57

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