CaltechAUTHORS
  A Caltech Library Service

Growth and characterization of ZnTe films grown on GaAs, InAs, GaSb, and ZnTe

Rajakarunanayake, Y. and Cole, B. H. and McCaldin, J. O. and Chow, D. H. and Söderström, J. R. and McGill, T. C. and Jones, C. M. (1989) Growth and characterization of ZnTe films grown on GaAs, InAs, GaSb, and ZnTe. Applied Physics Letters, 55 (12). pp. 1217-1219. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:RAJapl89

[img]
Preview
PDF
See Usage Policy.

675Kb

Use this Persistent URL to link to this item: http://resolver.caltech.edu/CaltechAUTHORS:RAJapl89

Abstract

We report the successful growth of ZnTe on nearly lattice-matched III-V buffer layers of InAs (0.75%), GaSb (0.15%), and on GaAs and ZnTe by molecular beam epitaxy. In situ reflection high-energy electron diffraction measurements showed the characteristic streak patterns indicative of two-dimensional growth. Photoluminescence measurements on these films show strong and sharp features near the band edge with no detectable luminescence at longer wavelengths. The integrated photoluminescence intensity from the ZnTe layers increased with better lattice match to the buffer layer. The ZnTe epilayers grown on high-purity ZnTe substrates exhibited stronger luminescence than the substrates. We observe narrow luminescence linewidths (full width at half maximum ~ 1–2 Å) indicative of uniform high quality growth. Secondary-ion mass spectroscopy and electron microprobe measurements, however, reveal substantial outdiffusion of Ga and In for growths on the III-V buffer layers.


Item Type:Article
Additional Information:Copyright © 1989 American Institute of Physics. Received 17 April 1989; accepted 12 July 1989. We would like to thank B. Fitzpatrick for providing the ZnTe substrates. We would also like to thank C. A. Evans of Evans and Associates for help with the SIMS experiments, and J. Armstrong for help with the electron microprobe analysis. This work was supported by Defense Advanced Research Projects Agency, as monitored by Office of Naval Research under contract No. N00014-86-0841.
Subject Keywords:DIFFUSION; ATOM TRANSPORT; PHOTOLUMINESCENCE; MOLECULAR BEAM EPITAXY; RHEED; FILM GROWTH; THIN FILMS; EPITAXIAL LAYERS; GALLIUM ARSENIDES; ZINC TELLURIDES; GALLIUM ANTIMONIDES; INDIUM ARSENIDES; VAPOR DEPOSITED COATINGS
Record Number:CaltechAUTHORS:RAJapl89
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:RAJapl89
Alternative URL:http://dx.doi.org/10.1063/1.101659
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:4008
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:24 Jul 2006
Last Modified:26 Dec 2012 08:57

Repository Staff Only: item control page