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Independently contacted two-dimensional electron systems in double quantum wells

Eisenstein, J. P. and Pfeiffer, L. N. and West, K. W. (1990) Independently contacted two-dimensional electron systems in double quantum wells. Applied Physics Letters, 57 (22). pp. 2324-2326. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:EISapl90

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Abstract

A new technique for creating independent ohmic contacts to closely spaced two-dimensional electron systems in double quantum well (DQW) structures is described. Without use of shallow diffusion or precisely controlled etching methods, the present technique results in low-resistance contacts which can be electrostatically switched between the two-conducting layers. The method is demonstrated with a DQW consisting of two 200 Å GaAs quantum wells separated by a 175 Å AlGaAs barrier. A wide variety of experiments on Coulomb and tunnel-coupled 2D electron systems is now accessible.


Item Type:Article
Additional Information:Copyright © 1990 American Institute of Physics (Received 7 June 1990; accepted 20 September 1990)
Subject Keywords:OHMIC CONTACTS; QUANTUM WELL STRUCTURES; ETCHING; ATOM TRANSPORT; GALLIUM ARSENIDES; ALUMINIUM ARSENIDES; ELECTRON GAS; ELECTRON MOBILITY; ELECTRIC CONDUCTIVITY; FABRICATION
Record Number:CaltechAUTHORS:EISapl90
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:EISapl90
Alternative URL:http://dx.doi.org/10.1063/1.103882
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:4068
Collection:CaltechAUTHORS
Deposited By: Archive Administrator
Deposited On:26 Jul 2006
Last Modified:26 Dec 2012 08:57

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