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Magnetoelectric properties of magnetite thin films

Feng, J. S.-Y. and Pashley, R. D. and Nicolet, M.-A. (1975) Magnetoelectric properties of magnetite thin films. Journal of Physics C: Solid State Physics, 8 (7). pp. 1010-1022. ISSN 0022-3719. http://resolver.caltech.edu/CaltechAUTHORS:FENjpcss75

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Abstract

Resistivity, DC Hall effect and transverse magnetoresistance measurements were made on polycrystalline thin films of magnetite (Fe3O4) from 104K to room temperature. The Verwey transition is observed at TV=123K, about 4K higher than reported for bulk magnetite. The ordinary and extraordinary Hall coefficients are negative over the entire temperature range, consistent with negatively charged carriers. The extraordinary Hall coefficient exhibits a rho 1/3 dependence on the resistivity above TV and a rho 2/3 dependence below TV. The magnetoresistance is negative at all temperatures and for all magnetic field strengths. The planar Hall effect signal was below the sensitivity of the present experiment.


Item Type:Article
Additional Information:© 1975 IOP Publishing Ltd. Received 28 June 1974, in final form 5 August 1974. This work would not have been possible without the cooperation of J L Beauchamp, who kindly allowed us to use his electromagnet. We are also indebted to F B Humphrey, T M Morris, and C H Wilts for the use of their facilities and for guidance. We thank C H Bajorek (IBM-Thomas J Watson Research Center) for providing the electron micrograph and for helpful discussions. Thanks are also due to T C McGill for stimulating conversations on electronic transport in solids.
Record Number:CaltechAUTHORS:FENjpcss75
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:FENjpcss75
Alternative URL:http://stacks.iop.org/0022-3719/8/1010
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ID Code:407
Collection:CaltechAUTHORS
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Deposited On:09 Jun 2005
Last Modified:26 Dec 2012 08:40

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