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Field-induced resonant tunneling between parallel two-dimensional electron systems

Eisenstein, J. P. and Pfeiffer, L. N. and West, K. W. (1991) Field-induced resonant tunneling between parallel two-dimensional electron systems. Applied Physics Letters, 58 (14). pp. 1497-1499. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:EISapl91

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Abstract

Resonant tunneling between two high-mobility two-dimensional (2D) electron systems in a double quantum well structure has been induced by the action of an external Schottky gate field. Using one 2D electron gas as source and the other as drain, the tunnel conductance between them shows a strong resonance when the gate field aligns the ground subband edges of the two quantum wells.


Item Type:Article
Additional Information:Copyright © 1991 American Institute of Physics (Received 6 December 1990; accepted 1 February 1991) It is a pleasure to thank T. J. Gramila, H. L. Stormer, and F. Capasso for useful discussions.
Subject Keywords:TUNNEL EFFECT; QUANTUM WELL STRUCTURES; SCHOTTKY BARRIER DIODES; ELECTRON GAS; GALLIUM ARSENIDES; ALUMINIUM ARSENIDES
Record Number:CaltechAUTHORS:EISapl91
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:EISapl91
Alternative URL:http://dx.doi.org/10.1063/1.105157
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:4072
Collection:CaltechAUTHORS
Deposited By: Archive Administrator
Deposited On:26 Jul 2006
Last Modified:26 Dec 2012 08:57

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