Eisenstein, J. P. and Pfeiffer, L. N. and West, K. W. (1991) Field-induced resonant tunneling between parallel two-dimensional electron systems. Applied Physics Letters, 58 (14). pp. 1497-1499. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:EISapl91
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Resonant tunneling between two high-mobility two-dimensional (2D) electron systems in a double quantum well structure has been induced by the action of an external Schottky gate field. Using one 2D electron gas as source and the other as drain, the tunnel conductance between them shows a strong resonance when the gate field aligns the ground subband edges of the two quantum wells.
|Additional Information:||Copyright © 1991 American Institute of Physics (Received 6 December 1990; accepted 1 February 1991) It is a pleasure to thank T. J. Gramila, H. L. Stormer, and F. Capasso for useful discussions.|
|Subject Keywords:||TUNNEL EFFECT; QUANTUM WELL STRUCTURES; SCHOTTKY BARRIER DIODES; ELECTRON GAS; GALLIUM ARSENIDES; ALUMINIUM ARSENIDES|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Archive Administrator|
|Deposited On:||26 Jul 2006|
|Last Modified:||26 Dec 2012 08:57|
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