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Kinetic modeling of microscopic processes during electron cyclotron resonance microwave plasma-assisted molecular beam epitaxial growth of GaN/GaAs-based heterostructures

Bandić, Z. Z. and Hauenstein, R. J. and O'Steen, M. L. and McGill, T. C. (1996) Kinetic modeling of microscopic processes during electron cyclotron resonance microwave plasma-assisted molecular beam epitaxial growth of GaN/GaAs-based heterostructures. Applied Physics Letters, 68 (11). pp. 1510-1512. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:BANapl96

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Abstract

Microscopic growth processes associated with GaN/GaAs molecular beam epitaxy (MBE) are examined through the introduction of a first-order kinetic model. The model is applied to the electron cyclotron resonance microwave plasma-assisted MBE (ECR-MBE) growth of a set of delta-GaNyAs1–y/GaAs strained-layer superlattices that consist of nitrided GaAs monolayers separated by GaAs spacers, and that exhibit a strong decrease of y with increasing T over the range 540–580 °C. This y(T) dependence is quantitatively explained in terms of microscopic anion exchange, and thermally activated N surface-desorption and surface-segregation processes. N surface segregation is found to be significant during GaAs overgrowth of GaNyAs1–y layers at typical GaN ECR-MBE growth temperatures, with an estimated activation energy Es ~ 0.9 eV. The observed y(T) dependence is shown to result from a combination of N surface segregation/desorption processes.


Item Type:Article
Additional Information:©1996 American Institute of Physics. Received 5 September 1995; accepted 4 January 1996. This work was supported by the Office of Naval Research under Grant No. N00014-92-J-1845. Additionally, R.J.H. and M.L.O. wish to acknowledge the support of Air Force Office of Scientific Research under Contract Nos. F49620-93-1-0211 and F49620-93-10389, and the support of the Advanced Research Projects Agency, monitored through the Army Research Office under Contract No. DAAH04-94-G-0393.
Subject Keywords:ECR HEATING; FILM GROWTH; GALLIUM ARSENIDES; GALLIUM NITRIDES; HETEROSTRUCTURES; KINETIC EQUATIONS; MOLECULAR BEAM EPITAXY; PLASMA
Record Number:CaltechAUTHORS:BANapl96
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:BANapl96
Alternative URL:http://dx.doi.org/10.1063/1.115682
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:4229
Collection:CaltechAUTHORS
Deposited By: Lindsay Cleary
Deposited On:08 Aug 2006
Last Modified:26 Dec 2012 08:58

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