Choi, S. H. and Wang, K. L. and Leung, M. S. and Stupian, G. W. and Presser, N. and Morgan, B. A. and Robertson, R. E. and Abraham, M. and King, E. E. and Tueling, M. B. and Chung, S. W. and Heath, J. R. and Cho, S. L. and Ketterson, J. B. (2000) Fabrication of bismuth nanowires with a silver nanocrystal shadowmask. Journal of Vacuum Science and Technology A, 18 (4). pp. 1326-1328. ISSN 0734-2101 http://resolver.caltech.edu/CaltechAUTHORS:CHOjvsta00
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We fabricated bismuth (Bi) nanowires with low energy electron beam lithography using silver (Ag) nanocrystal shadowmasks and a subsequent chlorine reactive ion etching. Submicron-size metal contacts on the single Bi nanowire were successfully prepared by in situ focused ion beam metal deposition for transport measurements. The temperature dependent resistance measurements on the 50 nm wide Bi nanowires showed that the resistance increased with decreasing temperature, which is characteristic of semiconductors and insulators.
|Additional Information:||©2000 American Vacuum Society. (Received 1 October 1999; accepted 3 January 2000) The authors gratefully acknowledge support by the Augmentation Awards for Science and Engineering Research Training (AASERT) Fellowship Grant No. N00014-96-1-1258, the Office of Naval Research MURI, and ARO MURI and the U.S. Air Force under Contract No. F04701-93-C-0094. One of the authors (J.R.H.) acknowledges the Office of Naval Research Contract No. N00014-981-0422, and the Packard Foundation. PAPERS FROM THE 46TH NATIONAL SYMPOSIUM OF THE AMERICAN VACUUM SOCIETY|
|Subject Keywords:||bismuth; quantum wires; nanostructured materials; nanotechnology; masks; electron beam lithography; sputter etching; focused ion beam technology; ion beam assisted deposition; electrical resistivity|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Archive Administrator|
|Deposited On:||08 Aug 2006|
|Last Modified:||26 Dec 2012 08:58|
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