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Ion implantation damage of silicon as observed by optical reflection spectroscopy in the 1 to 6 eV region

Kurtin, Stephen and Shifrin, Gordon A. and McGill, T. C. (1969) Ion implantation damage of silicon as observed by optical reflection spectroscopy in the 1 to 6 eV region. Applied Physics Letters, 14 (7). pp. 223-225. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:KURapl69

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Abstract

Optical reflection spectra of crystalline, sputtered, and ion implanted silicon specimens are presented. Characteristic aspects of the spectra of ion implanted specimens are related to lattice damage.


Item Type:Article
Additional Information:©1969 The American Institute of Physics. Received 15 November 1968; revised 6 March 1969. We would like to thank R. Hart and D. Jamba of these laboratories for preparing the ion implanted specimens, H. Garvin and M. Braunstein for supplying the sputtered silicon specimens, E. Wolf for analyses with the scanning electron microscope, and A. Rabideau for technical assistance. We are indebted to J. W. Mayer, O. J. March, G. S. Picus, and R. Hart for many helpful discussions.
Record Number:CaltechAUTHORS:KURapl69
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:KURapl69
Alternative URL:http://dx.doi.org/10.1063/1.1652788
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:4286
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:11 Aug 2006
Last Modified:26 Dec 2012 08:58

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