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Direct determination of Al content in molecular-beam epitaxially grown AlxGa1–xAs (0<=x<=1) by nuclear resonant reaction analysis and x-ray rocking curve techniques

Xiong, Fulin and Tombrello, T. A. and Chen, H. Z. and Morkoç, H. and Yariv, A. (1988) Direct determination of Al content in molecular-beam epitaxially grown AlxGa1–xAs (0<=x<=1) by nuclear resonant reaction analysis and x-ray rocking curve techniques. Journal of Vacuum Science and Technology B, 6 (2). pp. 758-762. ISSN 1071-1023. http://resolver.caltech.edu/CaltechAUTHORS:XIOjvstb88

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Abstract

The techniques of nuclear resonant reaction analysis (NRRA) using 27Al(p,gamma)28Si and x-ray rocking curve (XRC) based on double-crystal diffractometry have been utilized to determine directly the Al concentration and its depth distribution in molecular-beam epitaxially (MBE) grown AlxGa1–xAs/GaAs heterojunctions. Combination of these two methods has revealed a linear relationship between the Al mole fraction and the lattice strain. This can eliminate the need for assuming that Vegard's law holds and that extrapolated elastic coefficients are accurate. The result supports that both of these two techniques provide an accurate determination of the absolute Al content and crystalline quality in AlxGa1–xAs/GaAs throughout the entire composition range (0<=x<=1) as well as profiling the Al distribution. In addition, significant depth fluctuations in the Al mole fraction in some samples have been probed by the NRRA technique as well as by the XRC. The result suggests that a reliable and accurate measurement must be undertaken to ensure the control of the required Al distribution, which is necessary for the high performance of many devices.


Item Type:Article
Additional Information:The authors greatly acknowledge Professor T. Vreeland, Jr. for valuable discussions on the XRC analysis and Mr. Ed Koo for his assistance on the NRRA work. We thank the Coordinated Science Laboratory, University of Illinois at Urbana-Champaign for providing some of the samples used in this study. The work is supported in part by Naytional Science Foundation (DMR86-15641). H.M. is a distinguished visiting scientist at JPL and is partially supported by SDIO-IST through JPL.
Subject Keywords:CHEMICAL COMPOSITION; ALUMINIUM ARSENIDES; GALLIUM ARSENIDES; MOLECULAR BEAM EPITAXY; HETEROJUNCTIONS; PERFORMANCE; SEMICONDUCTOR DEVICES; DEPTH PROFILES; ALUMINIUM 27; SILICON 28; ELASTICITY; SEMICONDUCTOR DEVICES; PROTON REACTIONS; X–RAY DIFFRACTION; NUCLEAR REACTION ANALYSIS
Record Number:CaltechAUTHORS:XIOjvstb88
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:XIOjvstb88
Alternative URL:http://dx.doi.org/10.1116/1.584367
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:4293
Collection:CaltechAUTHORS
Deposited By: Archive Administrator
Deposited On:12 Aug 2006
Last Modified:26 Dec 2012 08:58

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