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High-coherence semiconductor lasers based on integral high-Q resonators in hybrid Si/III-V platforms

Santis, Christos Theodoros and Steger, Scott T. and Vilenchik, Yaakov and Vasilyev, Arseny and Yariv, Amnon (2014) High-coherence semiconductor lasers based on integral high-Q resonators in hybrid Si/III-V platforms. Proceedings of the National Academy of Sciences of the United States of America, 111 (8). pp. 2879-2884. ISSN 0027-8424. PMCID PMC3939879. doi:10.1073/pnas.1400184111.

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The semiconductor laser (SCL) is the principal light source powering the worldwide optical fiber network. The ever-increasing demand for data is causing the network to migrate to phase-coherent modulation formats, which place strict requirements on the temporal coherence of the light source that no longer can be met by current SCLs. This failure can be traced directly to the canonical laser design, in which photons are both generated and stored in the same, optically lossy, III-V material. This leads to an excessive and large amount of noisy spontaneous emission commingling with the laser mode, thereby degrading its coherence. High losses also decrease the amount of stored optical energy in the laser cavity, magnifying the effect of each individual spontaneous emission event on the phase of the laser field. Here, we propose a new design paradigm for the SCL. The keys to this paradigm are the deliberate removal of stored optical energy from the lossy III-V material by concentrating it in a passive, low-loss material and the incorporation of a very high-Q resonator as an integral (i.e., not externally coupled) part of the laser cavity. We demonstrate an SCL with a spectral linewidth of 18 kHz in the telecom band around 1.55 μm, achieved using a single-mode silicon resonator with Q of 10^6.

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Santis, Christos Theodoros0000-0001-8636-1613
Additional Information:© 2014 National Academy of Sciences. Contributed by Amnon Yariv, January 9, 2014 (sent for review December 6, 2013). We are grateful to Prof. John Bowers and his group at the University of California, Santa Barbara for technical assistance. The authors acknowledge the Army Research Office, the National Science Foundation, and the Defense Advanced Research Projects Agency for financial support, as well as the Kavli Nanoscience Institute at the California Institute of Technology for providing technical and fabrication infrastructure. Author contributions: C.T.S., S.T.S., and A.Y. designed research; C.T.S., S.T.S., Y.V., and A.V. performed research; C.T.S. and S.T.S. analyzed data; and C.T.S., S.T.S., and A.Y. wrote the paper. Conflict of interest statement: The California Institute of Technology has filed a provisional patent application based on the work disclosed in the manuscript. C.T.S, S.T.S., and A.Y. are named as coinventors. Freely available online through the PNAS open access option.
Group:Kavli Nanoscience Institute
Funding AgencyGrant Number
Army Research Office (ARO)UNSPECIFIED
Defense Advanced Research Projects Agency (DARPA)UNSPECIFIED
Kavli Nanoscience InstituteUNSPECIFIED
Subject Keywords:narrow linewidth; silicon photonics; phase noise; coherent optical communications
Issue or Number:8
PubMed Central ID:PMC3939879
Record Number:CaltechAUTHORS:20140218-140720385
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Official Citation:High-coherence semiconductor lasers based on integral high-Q resonators in hybrid Si/III-V platforms Christos Theodoros Santis, Scott T. Steger, Yaakov Vilenchik, Arseny Vasilyev, and Amnon Yariv PNAS 2014 ; published ahead of print February 10, 2014, doi:10.1073/pnas.1400184111
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:43855
Deposited By: Ruth Sustaita
Deposited On:18 Feb 2014 22:42
Last Modified:10 Nov 2021 16:44

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