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Room-Temperature Continuous-Wave Vertical-Cavity Single-Quantum-Well Microlaser Diodes

Lee, Y. H. and Jewell, J. L. and Scherer, A. and McCall, S. L. and Harbison, J. P. and Florez, L. T. (1989) Room-Temperature Continuous-Wave Vertical-Cavity Single-Quantum-Well Microlaser Diodes. Electronics Letters, 25 (20). pp. 1377-1378. ISSN 0013-5194. http://resolver.caltech.edu/CaltechAUTHORS:LEEel89

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Abstract

Room-temperature continuous and pulsed lasing of vertical-cavity, single-quantum-well, surface-emitting microlasers is achieved at ~983nm. The active Ga[sub][0-8]In[sub][0-2]As single quantum well is 100 [angstroms] thick. These microlasers have the smallest gain medium volumes among lasers ever built. The entire laser structure is grown by molecular beam epitaxy and the microlasers are formed by chemically assisted ion-beam etching. The microlasers are 3-50-μm across. The minimum threshold currents are 1.1 mA (pulsed) and 1.5 mA (CW).


Item Type:Article
Additional Information:©1989 IEE. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the IEE.
Subject Keywords:Semiconductor lasers, Quantum optics, LEDs
Record Number:CaltechAUTHORS:LEEel89
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:LEEel89
Alternative URL:http://ieeexplore.ieee.org/iel1/2220/1417/00034007.pdf
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:452
Collection:CaltechAUTHORS
Deposited By: Archive Administrator
Deposited On:20 Jun 2005
Last Modified:26 Dec 2012 08:40

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