Scherer, A. and Jewell, J. L. and Walther, M. and Harbison, J. P. and Florez, L. T. (1992) Formation of Low Threshold Voltage Microlasers. Electronics Letters, 28 (13). pp. 1224-1226. ISSN 0013-5194 http://resolver.caltech.edu/CaltechAUTHORS:AXEel92
See Usage Policy.
Use this Persistent URL to link to this item: http://resolver.caltech.edu/CaltechAUTHORS:AXEel92
Vertical cavity surface emitting lasers (VCSELs) with threshold voltages of 1.7V have been fabricated. The resistance-area product in these new vertical cavity lasers is comparable to that of edge-emitting lasers, and threshold currents as low as 3 mA have been measured. Molecular beam epitaxy was used to grow n-type mirrors, a quantum well active region, and a heavily Be-doped p-contact. After contact definition and alloying, passive high-reflectivity mirrors were deposited by reactive sputter deposition of SiO2/Si3N4 to complete the laser cavity.
|Additional Information:||©1992 IEE. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the IEE. The authors wish to thank E. Kapon, B. P. Van der Gaag and R. J. Martin for their assistance.|
|Subject Keywords:||Lasers, Semiconductor lasers|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Archive Administrator|
|Deposited On:||21 Jun 2005|
|Last Modified:||26 Dec 2012 08:40|
Repository Staff Only: item control page